Hsin-Ying Lee

Prof. Hsin-Ying Lee

National Cheng Kung University, Tainan City, Taiwan (R.O.C)
orcid

Research Focus & Metrics

Academic Career Length

26Years (2001-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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25 December 2017 in IEEE Photonics Technology Letters
Verified
Journal Article
Closed access
GCGuan-Syun Chen
Guan-Syun Chen
BWBo-Yu Wei
Bo-Yu Wei
Ching-Ting LeeChing-Ting Lee
Ching-Ting Lee
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee
In this letter, monolithic red, green, and blue (RGB) micro light-emitting diodes (LEDs) were fabricated using gallium nitride based blue micro LEDs and quantum dots (QDs). Red and green QDs were sprayed onto individual region surrounded by patterned black matrix photoresist on the blue micro LEDs to form color conversion layers. Owing to its light-blocking capability, the patterned black matrix photoresist improved the contrast ratio of the micro LEDs from 11 to 22. To enhance the color conversion efficiency and the light output intensity, a hybrid Bragg reflector (HBR) was deposited on the bottom side of the monolithic RGB micro LEDs, thus reflecting the RGB light emitted to the substrate. To further improve the color purity of the red and green light, a distributed Bragg reflector (DBR) with high reflection for the blue light was deposited on the top side of the QDs/micro LEDs. The red and green light output intensities of the micro LEDs with HBR and DBR were enhanced by about 27%.

1 January 2019 in Journal of Alloys and Compounds
Verified
Journal Article
Closed access
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee
YHYung-Ching Heish
Yung-Ching Heish
Ching-Ting LeeChing-Ting Lee
Ching-Ting Lee

1 November 2014 in Biosensors and Bioelectronics
Verified
Journal Article
Closed access
YCYu-Fu Chen
Yu-Fu Chen
HWHung-Wei Wu
Hung-Wei Wu
YHYong-Han Hong
Yong-Han Hong
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee

8 February 2018 in IEEE Photonics Technology Letters
Verified
Journal Article
Closed access
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee
JLJyun-Ting Liu
Jyun-Ting Liu
Ching-Ting LeeChing-Ting Lee
Ching-Ting Lee
To modulate the cutoff wavelength of the metal-semiconductor-metal deep ultraviolet photodetectors (MSM DUV-PDs), the aluminum content of the aluminum oxide-alloyed gallium oxide (Ga2O3:Al2O3) absorption layers were deposited using radio frequency (RF) magnetron cosputter system with dual targets, in which the Ga2O3 target was sputtered with a RF power of 100 W and the Al2O3 target sputtered with various RF powers. The optical bandgap energy of the Ga2O3:Al2O3 films increased with an increase of the Al content deposited with a larger sputtered RF power of the Al2O3 target. In view of the suppression effect of the oxygen vacancy and the defect by the more Al-O bonds in the Ga2O3:Al2O3 absorption layer, the noise performances and the detectivity of the MSM DUV-PDs were improved. For depositing the Al atomic percentage of 5.9 % in the Ga2O3:Al2O3 absorption layer, the resulting MSM DUV-PDs revealed the cutoff wavelength of 230 nm, the noise equivalent power of 2.80 × 10−12 W, and the detectivity of 1.37 × 1011 cmHz0.5W−1. Furthermore, the dominant low frequency noise source was the flicker noise.

17 January 2022 in Materials Science in Semiconductor Processing
Verified
Journal Article
Closed access
SCShao-Yu Chu
Shao-Yu Chu
TYTsung-Han Yeh
Tsung-Han Yeh
Ching-Ting LeeChing-Ting Lee
Ching-Ting Lee
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee

1 November 2018 in Solar Energy
Verified
Journal Article
Closed access
GCGuan-Syun Chen
Guan-Syun Chen
YCYi-Ching Chen
Yi-Ching Chen
Ching-Ting LeeChing-Ting Lee
Ching-Ting Lee
Hsin-Ying LeeHsin-Ying Lee
Hsin-Ying Lee