The rapid research progress in tin-based binary sulfides (Sn_xS_y = o-SnS, c-SnS, SnS₂, and Sn₂S₃) by the solution process has opened a new path not only for photovoltaics to generate clean energy at ultra-low costs but also for photocatalytic and thermoelectric applications. Fascinated by their prosperous developments, a fundamental understanding of the Sn_xS_y thin film growth with respect to the deposition parameters is necessary to enhance the film quality and device performance. Therefore, the present review article initially delivers all-inclusive information such as structural characteristics, optical characteristics, and electrical characteristics of Sn_xS_y. Next, an overview of the chemical bath deposition of Sn_xS_y thin films and the influence of each deposition parameter on the growth and physical properties of Sn_xS_y are interestingly outlined.

Eco-friendly tin sulfide (SnS) thin films were deposited by chemical solution process using varying concentrations of a sulfur precursor (thioacetamide, 0.50–0.75 M). Optimized thioacetamide concentrations of 0.6 and 0.7 M were obtained for the preparation of single-phase SnS and SnS₂ films for photovoltaic absorbers and buffers, respectively. The as-deposited SnS and SnS₂ thin films were uniform and pinhole-free without any major cracks and satisfactorily adhered to the substrate; they appeared in dark-brown and orange colors, respectively. Thin-film studies (compositional, structural, optical, and electrical) revealed that the as-prepared SnS and SnS₂ films were polycrystalline in nature; exhibited orthorhombic and hexagonal crystal structures with (111) and (001) peaks as the preferred orientation; had optimal band gaps of 1.28 and 2.92 eV; and exhibited p- and n-type electrical conductivity, respectively. This study presents a step towards the growth of SnS and SnS₂ binary compounds for a clean and economical power source.