Jun Wang

Dr. Jun Wang


Research Focus & Metrics

Academic Career Length

33Years (1994-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 March 2019 in InfoMat
Verified
Journal Article
Open access
PDF file
JWJun Wang
Jun Wang
JHJiayue Han
Jiayue Han
XCXiaoqing Chen
Xiaoqing Chen
XWXinran Wang
Xinran Wang
Two‐dimensional (2D) materials are intensively attractive for fabricating high sensitive photodetectors in terms of atomically thin flexible and ultrafast charge transport feature. Due to their atomically thin body, designing high performance detector requires new physical mechanisms and device structures. In this review, we classify design strategies and device structures into four categories depending on their physical mechanisms (photovoltaic effect, photoconductive effect, photothermoelectric effect or photobolometric effect, and surface plasma‐ wave‐assisted effect), and summarize the device performances. Finally, future prospects and development direction for 2D material photodetectors are described. Those design strategies descriptions about photoelectronic detector provide a reference for high responsivity and fast response speed photodetector at broadband sensing in the future.

2 February 2022 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
CHChao Han
Chao Han
XHXingwei Han
Xingwei Han
JHJiayue Han
Jiayue Han
MHMeiyu He
Meiyu He
SPSilu Peng
Silu Peng
JWJun Wang
Jun Wang

1 October 2018 in Advanced Materials
Verified
Journal Article
Closed access
PDF file
JHJiayue Han
Jiayue Han
JWJun Wang
Jun Wang
MYMing Yang
Ming Yang
XKXiao Kong
Xiao Kong
XCXiaoqing Chen
Xiaoqing Chen
XWXinran Wang
Xinran Wang

19 December 2018 in ACS Nano
Verified
Journal Article
Closed access
MYMing Yang
Ming Yang
JWJun Wang
Jun Wang
YZYafei Zhao
Yafei Zhao
LHLiang He
Liang He
CJChunhui Ji
Chunhui Ji
YJYadong Jiang
Yadong Jiang

25 June 2023 in Advanced Functional Materials
Verified
Journal Article
Closed access
CZChaoyi Zhang
Chaoyi Zhang
SPSilu Peng
Silu Peng
JHJiayue Han
Jiayue Han
CLChunyu Li
Chunyu Li
HZHongxi Zhou
Hongxi Zhou
JWJun Wang
Jun Wang

12 March 2025 in Advanced Science
Verified
Journal Article
Open access
YOYi Ouyang
Yi Ouyang
CZChaoyi Zhang
Chaoyi Zhang
JWJun Wang
Jun Wang
Zheng GuoZheng Guo
Zheng Guo
ZWZegao Wang
Zegao Wang
Mingdong DongMingdong Dong
Mingdong Dong
In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe 2 /MoS 2 van der Waals heterostructure, designed to operate as both a self‐powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe 2 /MoS 2 PN junction for self‐powered photodetection and utilizes trapping states at the SiO 2 /MoS 2 interface to emulate synaptic behavior. Gate voltage modulation enables precise control of the device's band structure, facilitating seamless switching between these two operational modes. The photodetector mode demonstrates broadband detection and fast response speed, while the optoelectronic synapse mode exhibits robust long‐term memory characteristics, mimicking biological synaptic behavior. This dual functionality opens new possibilities for integrating neuromorphic computing into traditional optoelectronic systems, offering a potential pathway for developing advanced intelligent sensing and computing technologies.