We present a white-light spectral interferometric technique for measuring the absolute spectral optical path difference (OPD) between the beams in a slightly dispersive Michelson interferometer with a thin-film structure as a mirror. We record two spectral interferograms to obtain the spectral interference signal and retrieve from it the spectral phase, which includes the effect of a cube beam splitter and the phase change on reflection from the thin-film structure. Knowing the effective thickness and dispersion of the beam splitter made of BK7 optical glass, we use a simple procedure to determine both the absolute spectral phase difference and OPD. The spectral OPD is measured for a uniform SiO₂ thin film on a silicon wafer and is fitted to the theoretical spectral OPD to obtain the thin-film thickness. The theoretical spectral OPD is determined provided that the optical constants of the thin-film structure are known. We measure also the nonlinear-like spectral phase and fit it to the theoretical values in order to obtain the thin-film thickness.

A two-step white-light spectral interferometric technique is used to retrieve the ellipsometric phase of a thin-film structure from the spectral interferograms recorded in a polarimetry configuration with a birefringent crystal. In the first step, the phase difference between p- and s-polarized waves propagating in the crystal alone is retrieved. In the second step, the additional phase change that the polarized waves undergo on reflection from the thin-film structure is retrieved. The new method is used in determining the thin-film thickness from ellipsometric phase measured for $\mathrm{Si}{\mathrm{O}}_2$ thin film on a Si substrate in a range from $550\text{to}900\mathrm{nm}$. The thicknesses of three different samples obtained are compared with those resulting from polarimetric measurements, and good agreement is confirmed.

A method to determine the thickness of a nonabsorbing thin film on an absorbing substrate is presented. A linear relation between the thin-film thickness and the tangent wavelength of the reflectance spectrum for a specific interference order is revealed, which permits the calculation of the thickness provided that the wavelength-dependent optical parameters of the thin film and the substrate are known. The thickness can be calculated precisely from the reflectance spectrum by using one extreme only, as is demonstrated theoretically for $\mathrm{Si}{\mathrm{O}}_2$ thin film on a Si substrate. The application of this method is demonstrated experimentally for the same thin-film structure but with different Si substrates. The results are compared with those given by the algebraic fitting method, and very good agreement is confirmed.