A radioluminescent (RL) dosimetric system, based on a SiO2 optical fiber with the core doped by Ce3+ ions as luminescent activators has been investigated. Structural and optical properties of the luminescent fiber have been studied by Raman, refractive index, RL and scintillation time decay measurements, and compared to those obtained on bulk material. The RL response of a composite fiber made of a short portion of active Ce-doped fiber coupled to a long commercial one has been investigated by x-ray irradiation. A linear RL intensity response has been found in the dose rate interval 6×10−3–40mGy∕s together with a good radiation hardness, suggesting possible application in low-dose monitoring.

Nanoclusters of crystalline ${\mathrm{SnO}}_2$ have been grown in glass, starting from tin-doped silica prepared by a sol–gel method. Based upon a particular choice of molecular precursors, nanocrystallites with a mean radius of about 1 nm and a quite narrow size dispersion were obtained, resulting in wide-band-gap (>4 eV) quantum dots (QDs). In this system, differently from other semiconductor-doped glasses, both the glassy host and the nanophase are oxides of IV-group elements. Owing to their thermochemical compatibility, the two phases give stable optical-grade glass ceramics with potential applications in photonics, opening up the field to technological employments of wide-band-gap QDs.

Excitation pattern and decay kinetics of ultraviolet photoluminescence of porous silica are investigated between 4.5 and 10 eV by means of synchrotron radiation. Spectra are dominated by a 3.7 eV emission similar to the recently observed ultraviolet emission of oxidized porous Si and Si nanostructures. Emission intensity is found to be controlled by the material specific surface. Other emissions are observed at 2.9, 3.8, and 4.2 eV. All emissions show lifetimes of a few nanoseconds. Spectral and kinetic features are sensibly different than in glassy ${\mathrm{SiO}}_{\mathrm{2}},$ suggesting a revision of previous assignments of ultraviolet emissions in oxidized porous Si and Si nanostructures.