Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between Au and chalcogen atoms is key to achieving this nearly perfect 1L exfoliation yield. On the other hand, it may significantly affect the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L MoS₂ exfoliated on ultraflat Au films (0.16–0.21 nm roughness) and finally transferred to an insulating Al₂O₃ substrate. Raman mapping and correlative analysis of the E′ and A₁′ peak positions revealed a moderate tensile strain (ε ≈ 0.2%) and p-type doping (n ≈ −0.25 × 10¹³ cm^–2) of 1L MoS₂ in contact with Au. Nanoscale resolution current mapping and current–voltage (I–V) measurements by conductive atomic force microscopy (C-AFM) showed direct tunneling across the 1L MoS₂ on Au, with a broad distribution of tunneling barrier values (Φ_B from 0.7 to 1.7 eV) consistent with p-type doping of MoS₂. After the final transfer of 1L MoS₂ on Al₂O₃/Si, the strain was converted to compressive strain (ε ≈ −0.25%). Furthermore, an n-type doping (n ≈ 0.5 × 10¹³ cm^–2) was deduced by Raman mapping and confirmed by electrical measurements of an Al₂O₃/Si back-gated 1L MoS₂ transistor. These results provide a deeper understanding of the Au-assisted exfoliation mechanism and can contribute to its widespread application for the realization of novel devices and artificial vdW heterostructures.

Graphite has been widely used by humans for a large part of their history. Nevertheless, it has only recently been possible to isolate its basic unit: carbon atoms arranged in a honeycomb structure on a single plane, namely graphene. Since its discovery, many techniques have been developed and improved to properly synthesize graphene and its derivatives which are part of the novel class of two-dimensional materials. These advanced materials have imposed themselves in nanotechnology thanks to some outstanding physical properties due to their reduced dimensions. In the case of graphene, its reduced dimension gives rise to a high electrical mobility, a large thermal conductivity, a high mechanical resistance, and a large optical transparency. Therefore, such aspect is of great scientific interest for both basic and applied research, ranging from theoretical physics to surface chemistry and applied solid state physics. The connection between all these fields is guaranteed by spectroscopy and especially by Raman spectroscopy which provides a lot of information about structural and electronic features of graphene. In this review, the authors present a systematized collection of the most important physical insights on the fundamental electronic and vibrational properties of graphene, their connection with basic optical and Raman spectroscopy, and a brief overview of main synthesis methods.

The influence of the instantaneous diffusion process on spin-echo decay of $E_{\gamma }^{\prime }$ centers in gamma irradiated silica is experimentally probed by spectral selective excitation within their inhomogeneous resonance line. Our results evidence the different effectiveness of this dephasing mechanism on varying the resonance field, manifesting itself by a faster decay of the echo signal when generated by spin packets located in the central part of the spectrum. It is shown that the dependence of the instantaneous diffusion rate on the spectral position of echo-active spins reproduces the shape of the $E_{\gamma }^{\prime }$ centers resonance spectrum. These features are discussed in the framework of theoretical models concerning the transversal spin relaxation in solid systems and point out the correlation between the instantaneous diffusion rate and the concentration of echo-active spins located within a spectral bandwidth of the order of the Rabi frequency.