Pim Groen

Pim Groen

orcid

Research Focus & Metrics

Academic Career Length

39Years (1988-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
8 October 2018 in Advanced Energy Materials
Verified
Journal Article
Closed access
PDF file
YGYulia Galagan
Yulia Galagan
FGFrancesco Di Giacomo
Francesco Di Giacomo
HGHarrie Gorter
Harrie Gorter
GKGerwin Kirchner
Gerwin Kirchner
IVIke de Vries
Ike de Vries
Pim GroenPim Groen
Pim Groen

30 April 2018 in Advanced Engineering Materials
Verified
Journal Article
Closed access
PDF file
RARobert Abbel
Robert Abbel
YGYulia Galagan
Yulia Galagan
Pim GroenPim Groen
Pim Groen

24 April 2017 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
DDDaniella B. Deutz
Daniella B. Deutz
NMNeola T. Mascarenhas
Neola T. Mascarenhas
JSJ. Ben J. Schelen
J. Ben J. Schelen
DLDago M. de Leeuw
Dago M. de Leeuw
SZSybrand van der Zwaag
Sybrand van der Zwaag
Pim GroenPim Groen
Pim Groen

1 April 1988 in Solid State Communications
Verified
Journal Article
Closed access
HZH.W. Zandbergen
H.W. Zandbergen
Pim GroenPim Groen
Pim Groen
GTG. Van Tendeloo
G. Van Tendeloo
JLJ. Van Landuyt
J. Van Landuyt
SAS. Amelinckx
S. Amelinckx

3 December 2018 in Advanced Electronic Materials
Verified
Journal Article
Closed access
PDF file
DKDimitra Katerinopoulou
Dimitra Katerinopoulou
PZPeter Zalar
Peter Zalar
JSJorgen Sweelssen
Jorgen Sweelssen
GKGeorge Kiriakidis
George Kiriakidis
CRCorné Rentrop
Corné Rentrop
ESEdsger C. P. Smits
Edsger C. P. Smits

3 June 2015 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
GGGerwin H. Gelinck
Gerwin H. Gelinck
AKAbhishek Kumar
Abhishek Kumar
DMDate Moet
Date Moet
JSJan-Laurens P. J. van der Steen
Jan-Laurens P. J. van der Steen
ABAlbert J. J. M. van Breemen
Albert J. J. M. van Breemen
KMKris Myny
Kris Myny
We made and characterized an X-ray detector on a 25-μm-thick plastic substrate that is capable of medicalgrade performance. As an indirect conversion flat panel detector, it combined a standard scintillator with an organic photodetector (OPD) layer and oxide thin-film transistor backplane. Using solution-processed organic bulk heterojunction photodiode rather than the usual amorphous silicon, process temperature is reduced to be compatible with plastic film substrates, and a number of costly lithography steps are eliminated, opening the door to lower production costs. With dark currents as low as 1 pA/mm 2 and sensitivity of 0.2 A/W the OPD also meets functional requirements: the proof-of-concept detector delivers high-resolution, dynamic images at 10 frames/s, and 200 pixels/in using X-ray doses as low as 3 μGy/frame.