Increasing the requirements on telecommunications systems such as the need for higher data rates and connectivity via the Internet of things results in continuously increasing amounts of electromagnetic radiation in ever-higher telecommunications bands (up to terahertz). This can generate unwanted electromagnetic radiation that can affect the operation of electronic devices and human health. Here, we demonstrate that nonconductive and lightweight, graphene-based composites can shield more than 99.99% of the electromagnetic energy in the sub-THz range mainly via absorption. This contrasts with state-of-the-art electromagnetic radiation shielding materials that simply redirect the energy of the radiation from a protected area via conduction-based reflection mechanisms. This shifts the problem of electromagnetic pollution from one place to another. We have demonstrated that the proposed composites can be fabricated by industrial compatible methods and are characterized by specific shielding efficiency values that exceed 30 dB cm³ g⁻¹, which is more than those for typical metals used today. Therefore these materials might help to solve the problem of electromagnetic environmental pollution.

We propose a method for monitoring the large-scale homogeneity of the reduction process of graphene oxide. For this purpose, a Raman mapping technique is employed to probe the evolution of the phonon properties of two different graphene oxide (GO) thin films upon controllable thermal reduction. The reduction of GO is reflected by the upshift of the statistical distribution of the relative intensity ratio of the G and D peaks ( I _D / I _G ) of the Raman spectra and is consistent with the ratio obtained for chemically reduced GO. In addition, the shifts of the position distributions of the main Raman modes ( ω D , ω G ) and their cross-correlation with the I _D / I _G ratio provides evidence of a change of the doping level, demonstrating the influence of reduction processes on GO films.

Titanium nitride is a well-known conductive ceramic material that has recently experienced resumed attention because of its plasmonic properties comparable to metallic gold and silver. Thus, TiN is an attractive alternative for modern and future photonic applications that require compatibility with the Complementary Metal-Oxide-Semiconductor (CMOS) technology or improved resistance to temperatures or radiation. This work demonstrates that polycrystalline TiN_x films sputtered on silicon at room temperature can exhibit plasmonic properties continuously from 400 nm up to 30 μm. The films’ composition, expressed as nitrogen to titanium ratio x and determined in the Secondary Ion Mass Spectroscopy (SIMS) experiment to be in the range of 0.84 to 1.21, is essential for optimizing the plasmonic properties. In the visible range, the dielectric function renders the interband optical transitions. For wavelengths longer than 800 nm, the optical properties of TiN_x are well described by the Drude model modified by an additional Lorentz term, which has to be included for part of the samples. The ab initio calculations support the experimental results both in the visible and infra-red ranges; particularly, the existence of a very low energy optical transition is predicted. Some other minor features in the dielectric function observed for the longest wavelengths are suspected to be of phonon origin.

Driven by the escalating demands of advanced technologies, developing integration strategies has kept pace with the realization of ultrafast components during the past two decades. Ultrafast all-optical switches enabled by artificial materials are considered at the forefront of the next generation of photonic integration for communications and high-volume data processing. Encouraged by these advancements, applications, and interest have increased toward all-optical switches based on epsilon-near-zero (ENZ) materials. However, some all-optical switches lack CMOS compatibility, require high energy activation, and are limited in switching speed and working wavelength. Here, we propose and demonstrate a multilayered ENZ metamaterial utilizing Si-compatible titanium nitride and indium-tin-oxide materials with two effective working wavelengths in the visible and near-infrared spectrum. This device enables switching time down to a few hundred femtoseconds utilizing minimal energy at the corresponding ENZ regions induced by intraband pumping. Our approach can enhance the adaptability of designing ENZ metamaterials for new hybrid integrated photonic components for low-power ultrafast all-optical terahertz modulation.

A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form dense and highly crystalline films. In this work, we demonstrate that the plasmonic properties of TiN films can be efficiently tuned even without intentional substrate heating by influencing the details of the deposition process and entailed films’ stoichiometry and microstructure. We also discuss the dependence of the deposition time/films’ thickness on the optical properties, which is another degree of freedom in controlling the optical response of the refractory metal nitride films. The proposed strategy allows for robust and cost-effective production of large-scale substrates with good plasmonic properties in a CMOS technology-compatible process that can be further processed, e.g., structurized. All reported films are characterized by the maximal values of the plasmonic Figure of Merit (FoM = − ε₁/ε₂) ranging from 0.8 to 2.6, and the sample with the best plasmonic properties is characterized by FoM at 700 nm and 1550 nm that is equal 2.1 in both cases. These are outstanding results, considering the films’ polycrystallinity and deposition at room temperature onto a non-matched substrate.