Nowadays, there is increasing interest in fast, accurate, and highly sensitive smart gas sensors with excellent selectivity boosted by the high demand for environmental safety and healthcare applications. Significant research has been conducted to develop sensors based on novel highly sensitive and selective materials. Computational and experimental studies have been explored in order to identify the key factors in providing the maximum active location for gas molecule adsorption including bandgap tuning through nanostructures, metal/metal oxide catalytic reactions, and nano junction formations. However, there are still great challenges, specifically in terms of selectivity, which raises the need for combining interdisciplinary fields to build smarter and high-performance gas/chemical sensing devices. This review discusses current major gas sensing performance-enhancing methods, their advantages, and limitations, especially in terms of selectivity and long-term stability. The discussion then establishes a case for the use of smart machine learning techniques, which offer effective data processing approaches, for the development of highly selective smart gas sensors. We highlight the effectiveness of static, dynamic, and frequency domain feature extraction techniques. Additionally, cross-validation methods are also covered; in particular, the manipulation of the k-fold cross-validation is discussed to accurately train a model according to the available datasets. We summarize different chemresistive and FET gas sensors and highlight their shortcomings, and then propose the potential of machine learning as a possible and feasible option. The review concludes that machine learning can be very promising in terms of building the future generation of smart, sensitive, and selective sensors.

In modern computing, the Boolean logic operations are set by interconnect schemes between the transistors. As the miniaturization in the component level to enhance the computational power is rapidly approaching physical limits, alternative computing methods are vigorously pursued. One of the desired aspects in the future computing approaches is the provision for hardware reconfigurability at run time to allow enhanced functionality. Here we demonstrate a reprogrammable logic device based on the electrothermal frequency modulation scheme of a single microelectromechanical resonator, capable of performing all the fundamental 2-bit logic functions as well asn-bit logic operations. Logic functions are performed by actively tuning the linear resonance frequency of the resonator operated at room temperature and under modest vacuum conditions, reprogrammable by the a.c.-driving frequency. The device is fabricated using complementary metal oxide semiconductor compatible mass fabrication process, suitable for on-chip integration, and promises an alternative electromechanical computing scheme.

We experimentally demonstrate an exploitation of the nonlinear softening, hardening, and veering phenomena (near crossing), where the frequencies of two vibration modes get close to each other, to realize a bandpass filter of sharp roll off from the passband to the stopband. The concept is demonstrated based on an electrothermally tuned and electrostatically driven MEMS arch resonator operated in air. The in-plane resonator is fabricated from a silicon-on-insulator wafer with a deliberate curvature to form an arch shape. A DC current is applied through the resonator to induce heat and modulate its stiffness, and hence its resonance frequencies. We show that the first resonance frequency increases up to twice of the initial value while the third resonance frequency decreases until getting very close to the first resonance frequency. This leads to the phenomenon of veering, where both modes get coupled and exchange energy. We demonstrate that by driving both modes nonlinearly and electrostatically near the veering regime, such that the first and third modes exhibit softening and hardening behavior, respectively, sharp roll off from the passband to the stopband is achievable. We show a flat, wide, and tunable bandwidth and center frequency by controlling the electrothermal actuation voltage.