Compared with standard monofacial photovoltaic (PV) systems, the simulation of the energy yield of bifacial PV systems is more challenging since the impact of factors such as the installation height, the ground albedo, shadowing of neighbored rows, the diffuse irradiance fraction, and the PV module design is more pronounced. Therefore, many academic institutions as well as companies are currently working on the development of suitable modeling tools that allow an accurate energy yield prediction of bifacial systems. In this article, we present the results of energy-yield simulations of bifacial PV systems with fixed tilt and horizontal single-axis tracking (HSAT) in comparison to their monofacial counterparts using a tool that has been developed at ISC Konstanz. In addition, the simulated data are compared with measured results. The energy yield of fixed tilt bifacial systems is simulated as a function of the number of rows and number of modules in a row as well as a function of the installation height. The simulated data have been compared with measured data obtained using a PV system with continuously changing tilt angels. The accuracy of the simulated data is shown to be from $+/-0.1$ % to $+/-4$ % depending on the tilt angle of the bifacial modules. In addition, the energy yield of bifacial HSAT PV systems have been simulated and compared with measured data for a bifacial HSAT system in Chile. In this comparison, the use of ray tracing instead of the view factor (VF) concept for modeling of the rear irradiance reduced the deviation between simulated and measured gain significantly. Therefore, the approach of using VF-based calculations for the front irradiance and ray tracing for the rear irradiance was then used to evaluate different bifacial system configurations in comparison to monofacial ones. Especially, the influence of a variation of the ground coverage ratio on the energy yield for various monofacial, bifacial fixed tilt, and HSAT systems was studied.

High-quality In0.53Ga0.47As/InP quantum wires and dots have been fabricated using high-voltage electron-beam lithography and wet chemical etching. Using poly(methyl- methacrylate) resist, gold lift-off, and wet chemical etching, dot structures with geometrical diameters down to ∼30 nm and wires with lateral widths down to 16 nm have been obtained. The wire structures were studied optically by means of photoluminescence spectroscopy and show strong optical emission even for the smallest geometrical widths and without overgrowth. The weak decrease of the quantum efficiency with decreasing wire width indicates that there is no significant damage at the sidewalls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the In0.53Ga0.47As/InP wires is independent of the wire width down to ∼60 nm. For smaller widths an increasing blue shift of the photoluminescence energy up to 60 meV is observed displaying a strong lateral quantization.