This paper presents a resonant pressure microsensor with the measurement range of 1 MPa suitable for the soaring demands of industrial gas pressure calibration equipment. The proposed microsensor consists of an SOI layer as a sensing element and a glass cap for vacuum packaging. The sensing elements include a pressure-sensitive diaphragm and two resonators embedded in the diaphragm by anchor structures. The resonators are excited by a convenient Lorentz force and detected by electromagnetic induction, which can maintain high signal outputs. In operation, the pressure under measurement bends the pressure-sensitive diaphragm of the microsensor, producing frequency shifts of the two underlining resonators. The microsensor structures were designed and optimized using finite element analyses and a 4” SOI wafer was employed in fabrications, which requires only one photolithographic step. Experimental results indicate that the Q-factors of the resonators are higher than 25,000 with a differential temperature sensitivity of 0.22 Hz/°C, pressure sensitivities of 6.6 Hz/kPa, and −6.5 Hz/kPa, which match the simulation results of differential temperature sensitivity of 0.2 Hz/°C and pressure sensitivities of ±6.5 Hz/kPa. In addition, characterizations based on a closed-loop manner indicate that the presented sensor demonstrates low fitting errors within 0.01% FS, high accuracy of 0.01% FS in the pressure range of 20 kPa to 1 MPa and temperature range of −55 to 85 °C, and the long-term stability within 0.01% FS in a 156-day period under the room temperature.

This paper presents a resonant pressure microsensor with a wide range of pressure measurements. The developed microsensor is mainly composed of a silicon-on-insulator (SOI) wafer to form pressure-sensing elements, and a silicon-on-glass (SOG) cap to form vacuum encapsulation. To realize a wide range of pressure measurements, silicon islands were deployed on the device layer of the SOI wafer to enhance equivalent stiffness and structural stability of the pressure-sensitive diaphragm. Moreover, a cylindrical vacuum cavity was deployed on the SOG cap with the purpose to decrease the stresses generated during the silicon-to-glass contact during pressure measurements. The fabrication processes mainly contained photolithography, deep reactive ion etching (DRIE), chemical mechanical planarization (CMP) and anodic bonding. According to the characterization experiments, the quality factors of the resonators were higher than 15,000 with pressure sensitivities of 0.51 Hz/kPa (resonator I), −1.75 Hz/kPa (resonator II) and temperature coefficients of frequency of 1.92 Hz/°C (resonator I), 1.98 Hz/°C (resonator II). Following temperature compensation, the fitting error of the microsensor was within the range of 0.006% FS and the measurement accuracy was as high as 0.017% FS in the pressure range of 200 ~ 7000 kPa and the temperature range of −40 °C to 80 °C.

This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz/°C was obtained in the range of −45 °C to 65 °C, which is one order of magnitude lower than the previously reported counterparts.

This paper presents the analysis and characterization of a resonant pressure microsensor, which employs a temperature compensation method based on differential outputs and a temperature sensor. Leveraging a silicon-on-insulator (SOI) wafer, this microsensor mainly consists of a pressure-sensitive diagram and two resonant beams (electromagnetic driving and electromagnetic induction) to produce a differential output. The resonators were vacuum packaged with a silicon-on-glass (SOG) cap using anodic bonding and the wire interconnection was realized by sputtering an Au film on highly topographic surfaces using a hard mask. After the fabrication of the resonant pressure microsensor, systematic experiments demonstrated that the pressure sensitivity of the presented microsensor was about 0.33 kPa/Hz. Utilizing the differential frequency of the two resonators and the signal from a temperature sensor to replace the two-frequency signals by polynomial fitting, the temperature compensation method based on differential outputs aims to increase the surface fitting accuracy of these microsensors which have turnover points. Employing the proposed compensation approach in this study, the errors were less than 0.02% FS of the full pressure scale (a temperature range of −40 to 85 °C and a pressure range of 200 kPa to 2000 kPa).

This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop and closed-loop manners, where the quality factor, differential sensitivity and linear correlation coefficient were quantified as higher than 10,000, 79.4 Hz/kPa and 0.99999, respectively. Compared to previous resonant piezoresistive sensors, the developed device leveraged single-crystal silicon as the piezoresistor, with advantages in simple sensing structures and fabrication steps. Furthermore, the differential setup was adopted in this study which can further improve the performances of the developed sensors.