A role for vacancies: Hafnia-based materials are of interest because of their potential use in microelectronic components. Hafnia-oxide is a ferroelectric material, but whether the polarization switching comes from the polar crystal phases or the migration of oxygen vacancies has remained an open question. Nukala et al. attempted to resolve this controversy by conducting electron microscopy during the operation of a hafnium zirconium oxide capacitor. The authors found that vacancy migration is intertwined with the ferroelectric switching, which has implications for the use of these materials in a range of microelectronic applications. Science , this issue p. 630

The intriguing thermophysical properties of ${\mathrm{CeB}}_6$ have been subject to investigation for more than 20 years. In particular, an exotic ground state, phase IV, emerges under doping with La. We report resonant x-ray scattering results on the order parameter symmetries in phase IV of ${\mathrm{Ce}}_{0.7}{\mathrm{La}}_{0.3}{\mathrm{B}}_6$, which condenses below $T_{\mathrm{IV}}=1.5\mathrm{K}$. The results reveal a degree of mesoscopic $5d$ dipole antiferromagnetic order, with propagation vector $Q_0=(\frac{1}{2}\frac{1}{2}\frac{1}{2})$, both below and above $T_{\mathrm{IV}}$. Below $T_{\mathrm{IV}}$, this polarization coexists with long-range $4f$ antiferro-octupole (AFO) order also at $Q_0$. The marked differences in temperature dependence and spatial correlation suggest a state of order parameter segregation at low temperature. A simple model of AFO order, consistent with the polarization dependent azimuth symmetries, the Bragg angle, and temperature dependence is given.

NanoMAX is the first hard X-ray nanoprobe beamline at the MAX IV laboratory. It utilizes the unique properties of the world's first operational multi-bend achromat storage ring to provide an intense and coherent focused beam for experiments with several methods. In this paper we present the beamline optics design in detail, show the performance figures, and give an overview of the surrounding infrastructure and the operational diffraction endstation.

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si–metal–oxide semiconductor field-effect transistor.