Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection.

Sensitive volume thickness for silicon on insulator (SOI) devices has scaled to the point that energy loss straggling cannot be ignored within the development of the manufacturing process. In this study, irradiation experiments and Geant4 simulation were carried out to explore the influence of energy loss straggling on single event upsets (SEUs) caused by sub-8 MeV proton direct ionization. We took a 28 nm fully-depleted SOI static random-access memory (SRAM) as the research target. According to our results, the depositing energy spectrum formed by monoenergetic low-energy protons that penetrated through the sensitive volume of the target SRAM was extremely broadened. We concluded that the SEUs we observed in this article were attributed to energy loss straggling. Therefore, it is sensible to take the new mechanism into consideration when predicting proton-induced SEUs for modern nanometer SOI circuits, instead of the traditional linear energy transfer (LET) method.

空间轨道环境中电子通常具有比质子更高的通量、更强的屏蔽穿透能力，并且纳米尺度下电子被证实足以引发器件单粒子翻转，从而成为影响航天器电子系统可靠性的新问题。基于28纳米体硅器件开展蒙特卡洛模拟仿真研究及电子辐照实验，揭示电子单粒子效应物理机理及特性。结果表明：器件临界电荷小于0.3fC或者电子能量小于100MeV时，直接电离是电子引发单粒子翻转的主要物理机理，直接电离产生的二次电子能量和截面受到初始电子能量的影响很小，进而使得直接电离主导下的单粒子翻转截面几乎不受入射电子能量影响。只有当器件临界电荷大于0.4fC且电子能量大于1000MeV时，电子与原子核的弹性碰撞产生的反冲核以及电子引发核反应产生的次级粒子间接电离才成为引发单粒子翻转的重要原因。而器件临界电荷小于0.2fC时，电子在典型地球轨道引发器件单粒子翻转的贡献将超过质子，因此直接电离是最值得关注的电子单粒子效应机理。