Ilku Nam

Prof. Ilku Nam

orcid

Research Focus & Metrics

Academic Career Length

18Years (2009-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 February 2017 in IEEE Microwave and Wireless Components Letters
Verified
Journal Article
Closed access
CCChihoon Choi
Chihoon Choi
JSJu Ho Son
Ju Ho Son
Ockgoo LeeOckgoo Lee
Ockgoo Lee
Ilku NamIlku Nam
Ilku Nam
A CMOS millimeter-wave (mmWave) downconversion mixer with a local-oscillator (LO) buffer is proposed for wireless Gb/s data-transfer enabling systems, such as 5G systems. To obtain high linearity at low supply voltages, the proposed mmWave downconversion mixer adopts an on-chip transformer-based topology. In order to achieve differential to single-ended conversion and IF output matching, while maintaining a high linearity performance, the proposed mmWave downconversion mixer incorporates an active balun with common-source and common-drain configurations employing common-mode noise and third-order intermodulation distortion cancellations. The proposed downconversion mixer with active balun and LO buffer was implemented using a 65-nm CMOS process and it draws 18 mA from a 1 V supply voltage. It demonstrates a gain greater than 5.6 dB, noise figure less than 10.9 dB, and third-order output intercept point more than 12.4 dBm, in the band from 57 to 66 GHz.

23 June 2021 in IEEE Transactions on Power Electronics
Verified
Journal Article
Closed access
SLSeungjik Lee
Seungjik Lee
KKKihyun Kim
Kihyun Kim
MSMinseob Shim
Minseob Shim
Ilku NamIlku Nam
Ilku Nam
A short-circuit detection (SCD) circuit is proposed for power electronics systems that use silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed SCD circuit incorporates a digital circuit for processing the voltage induced at the parasitic inductance of the source of SiC MOSFET to obtain an improved stable turn-off operation of the SiC MOSFET under SC condition. Compared with that of the conventional analog signal processing based SCD circuits, the proposed circuit has the advantages of having a turn-off operation which is robust to process, voltage, and temperature variations, being fully integrated without the use of external components and ease of design. The proposed circuit was implemented in a 350-nm Bipolar-CMOS-DMOS process. For functional verification, an SC test board integrating the proposed SCD circuit was developed. Experimental result validates that the proposed SCD circuit effectively functions under SC condition.

6 March 2019 in IEEE Transactions on Microwave Theory and Techniques
Verified
Journal Article
Closed access
HAHyunjin Ahn
Hyunjin Ahn
SBSeungjun Back
Seungjun Back
Ilku NamIlku Nam
Ilku Nam
DADeokgi An
Deokgi An
JLJaekyoung Lee
Jaekyoung Lee
Ockgoo LeeOckgoo Lee
Ockgoo Lee

5 September 2013 in IEEE Transactions on Circuits and Systems I: Regular Papers
Verified
Journal Article
Closed access
DIDonggu Im
Donggu Im
Ilku NamIlku Nam
Ilku Nam
A low noise and highly linear wideband CMOS receiver front-end for digital TV receivers is proposed. The proposed RF front-end comprises a wideband noise canceling common gate low noise amplifier (LNA) with a capacitively cross-coupled current source, a highly linear up-conversion micromixer with third-order intermodulation distortion cancellation, and a highly linear surface acoustic wave (SAW) driver with enhanced loop gain. The RF front-end was fabricated using a 0.13 μm CMOS process and it draws 27 mA from a 1.5 V supply voltage. It achieves a voltage gain of 23 dB, a noise figure of less than 4 dB, an IIP3 of greater than -6.5 dBm, and an IIP2 of greater than 28 dBm across the entire input band from 54 MHz to 882 MHz.

27 May 2022 in IEEE Access
Verified
Journal Article
Open access
SLSuyeon Lee
Suyeon Lee
YJYangji Jeon
Yangji Jeon
DYDae-Young Yoon
Dae-Young Yoon
Ockgoo LeeOckgoo Lee
Ockgoo Lee
DIDonggu Im
Donggu Im
Ilku NamIlku Nam
Ilku Nam
A CMOS up-conversion mixer with an intermediate frequency (IF) amplifier and local oscillator (LO) buffer is presented for mobile 28-GHz-band 5G dual-conversion transceivers. A balun transformer with improved common-mode rejection ratio characteristics is proposed to improve the LO second-harmonic signal suppression, which is a problem in the up-conversion mixer of the 5G dual-conversion architecture. By applying the proposed balun transformer instead of the conventional one, a common-mode rejection ratio greater than 10 dB can be achieved at the frequencies of the LO second-harmonic leakage signal. An up-conversion mixer with an IF amplifier and LO buffer incorporating the proposed balun transformer was implemented in a 65-nm CMOS process, and it draws a current of 31.4 mA from a 1-V supply voltage. It provides a gain larger than 22.2 dB, a noise figure less than 4.1 dB, a thirdorder output intercept point higher than 4.6 dBm, and an LO second-harmonic leakage signal lower than -55.5 dBm in frequencies ranging from 26.5 GHz to 29.5 GHz. It also exhibits a suppression improvement of the LO second-harmonic leakage signal of approximately 14 dB with respect to an up-conversion mixer with IF amplifier and LO buffer using the conventional balun transformer. The proposed up-mixer with IF amplifier and LO buffer is the first one reported that addresses the 2LO leakage issue and the first demonstration of 2LO leakage signal suppression improvement for a 5G mmWave dual-conversion single-quadrature transmitter.

23 January 2020 in IEEE Microwave and Wireless Components Letters
Verified
Journal Article
Closed access
HAHyunjin Ahn
Hyunjin Ahn
Ilku NamIlku Nam
Ilku Nam
Ockgoo LeeOckgoo Lee
Ockgoo Lee