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Dr. Martino Aldrigo
National Institute for Research and Development in Microtechnologies IMT-Bucharest

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Research Keywords & Expertise

0 nano and functional materials
0 Ferroelectric materials
0 Energy Harvesting Systems
0 Bidimensional materials
0 Electronics and Communication Engineering

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Short Biography

Martino Aldrigo received the Ph.D. in Electronics Engineering, Telecommunications and Information Technology in 2014 from the Faculty of Engineering, University of Bologna, Italy. Since 2014, he is Principal Researcher III with IMT-Bucharest, Romania. His main expertise comprises the electromagnetic simulation and experimental characterization of RF/microwave/millimeter-wave/THz systems for wireless/energy-harvesting applications. He has co-authored more than 60 papers in ISI ranked journals and conferences. He is an IEEE member. He serves or has served as reviewer for many journals and as (co-)chair in international conferences.

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Review
Published: 03 March 2021 in Nanomaterials
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Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip’s dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time.

ACS Style

Mircea Dragoman; Martino Aldrigo; Daniela Dragoman. Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials. Nanomaterials 2021, 11, 625 .

AMA Style

Mircea Dragoman, Martino Aldrigo, Daniela Dragoman. Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials. Nanomaterials. 2021; 11 (3):625.

Chicago/Turabian Style

Mircea Dragoman; Martino Aldrigo; Daniela Dragoman. 2021. "Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials." Nanomaterials 11, no. 3: 625.

Journal article
Published: 18 October 2020 in Nanomaterials
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In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1–16 GHz, when the applied direct current (DC) voltage is swept between 0 V and 4 V. Here, we exploit the orthorhombic polar phase in HfO2 through a careful doping using zirconium in an Atomic Layer Deposition (ALD) process, in order to guarantee phase stabilization at room temperature. Polarization versus voltage characterization has been carried out, showing a remanent polarization (Pr) of ~0.8 μC/cm2 and the coercive voltage at ~2.6 V. The average roughness has been found to be 0.2 nm for HfZrO films with a thickness of 6 nm. The uniform topography, without holes, and the low surface roughness demonstrate that the composition and the structure of the film are relatively constant in volume. Three filter configurations (low-pass, high-pass, and band-pass) have been designed, modelled, fabricated, and fully characterized in microwaves, showing a frequency shift of the minimum of the reflection coefficient between 90 MHz and 4.4 GHz, with a minimum insertion loss of approximately 6.9 dB in high-pass configuration.

ACS Style

Martino Aldrigo; Mircea Dragoman; Sergiu Iordanescu; Florin Nastase; Silviu Vulpe. Tunable Microwave Filters Using HfO2-Based Ferroelectrics. Nanomaterials 2020, 10, 2057 .

AMA Style

Martino Aldrigo, Mircea Dragoman, Sergiu Iordanescu, Florin Nastase, Silviu Vulpe. Tunable Microwave Filters Using HfO2-Based Ferroelectrics. Nanomaterials. 2020; 10 (10):2057.

Chicago/Turabian Style

Martino Aldrigo; Mircea Dragoman; Sergiu Iordanescu; Florin Nastase; Silviu Vulpe. 2020. "Tunable Microwave Filters Using HfO2-Based Ferroelectrics." Nanomaterials 10, no. 10: 2057.

Journal article
Published: 23 September 2020 in Physica E: Low-dimensional Systems and Nanostructures
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Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3-10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.

ACS Style

Mircea Dragoman; Martino Aldrigo; Daniela Dragoman; Ian M. Povey; Sergiu Iordanescu; Adrian Dinescu; Andrea Di Donato; Mircea Modreanu. Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector. Physica E: Low-dimensional Systems and Nanostructures 2020, 126, 114451 .

AMA Style

Mircea Dragoman, Martino Aldrigo, Daniela Dragoman, Ian M. Povey, Sergiu Iordanescu, Adrian Dinescu, Andrea Di Donato, Mircea Modreanu. Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector. Physica E: Low-dimensional Systems and Nanostructures. 2020; 126 ():114451.

Chicago/Turabian Style

Mircea Dragoman; Martino Aldrigo; Daniela Dragoman; Ian M. Povey; Sergiu Iordanescu; Adrian Dinescu; Andrea Di Donato; Mircea Modreanu. 2020. "Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector." Physica E: Low-dimensional Systems and Nanostructures 126, no. : 114451.

Journal article
Published: 01 January 2020 in IEEE Access
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ACS Style

Martino Aldrigo; Alina Cismaru; Mircea Dragoman; Sergiu Iordanescu; Emanuela Proietti; Giovanni Maria Sardi; Giancarlo Bartolucci; Romolo Marcelli. Amplitude and Phase Tuning of Microwave Signals in Magnetically Biased Permalloy Structures. IEEE Access 2020, 8, 190843 -190854.

AMA Style

Martino Aldrigo, Alina Cismaru, Mircea Dragoman, Sergiu Iordanescu, Emanuela Proietti, Giovanni Maria Sardi, Giancarlo Bartolucci, Romolo Marcelli. Amplitude and Phase Tuning of Microwave Signals in Magnetically Biased Permalloy Structures. IEEE Access. 2020; 8 ():190843-190854.

Chicago/Turabian Style

Martino Aldrigo; Alina Cismaru; Mircea Dragoman; Sergiu Iordanescu; Emanuela Proietti; Giovanni Maria Sardi; Giancarlo Bartolucci; Romolo Marcelli. 2020. "Amplitude and Phase Tuning of Microwave Signals in Magnetically Biased Permalloy Structures." IEEE Access 8, no. : 190843-190854.

Accepted manuscript
Published: 16 October 2019 in Semiconductor Science and Technology
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The electrodynamic properties of the first aero-material based on compound semiconductor, namely of Aero-GaN, in the terahertz frequency region are experimentally investigated. Spectra of complex dielectric permittivity, refractive index, surface impedance are measured at frequencies 4-100 cm-1 and in the temperature interval 4 – 300 K. The shielding properties are found based on experimental data. The aero-material shows excellent shielding effectiveness in the frequency range from 0.1 THz to 1.3 THz, exceeding 40 dB in a huge frequency bandwidth, which is of high interest for industrial applications. These results place the aero-GaN among the best THz shielding materials known today.

ACS Style

Tudor Braniste; Sergey Zhukov; Mircea L Dragoman; Liudmila Alyabyeva; Vladimir Ciobanu; Martino Aldrigo; Daniela Dragoman; Sergiu Iordanescu; Sindu Shree; Simion Raevschi; Rainer Adelung; Boris P Gorshunov; Ion M Tiginyanu. Terahertz shielding properties of aero-GaN. Semiconductor Science and Technology 2019, 34, 12LT02 .

AMA Style

Tudor Braniste, Sergey Zhukov, Mircea L Dragoman, Liudmila Alyabyeva, Vladimir Ciobanu, Martino Aldrigo, Daniela Dragoman, Sergiu Iordanescu, Sindu Shree, Simion Raevschi, Rainer Adelung, Boris P Gorshunov, Ion M Tiginyanu. Terahertz shielding properties of aero-GaN. Semiconductor Science and Technology. 2019; 34 (12):12LT02.

Chicago/Turabian Style

Tudor Braniste; Sergey Zhukov; Mircea L Dragoman; Liudmila Alyabyeva; Vladimir Ciobanu; Martino Aldrigo; Daniela Dragoman; Sergiu Iordanescu; Sindu Shree; Simion Raevschi; Rainer Adelung; Boris P Gorshunov; Ion M Tiginyanu. 2019. "Terahertz shielding properties of aero-GaN." Semiconductor Science and Technology 34, no. 12: 12LT02.

Journal article
Published: 19 September 2019 in IEEE Access
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This paper is dedicated to the study of the tunable electromagnetic properties of HfO2 doped with Zr (further referred to as HfZrO) grown on high-resistivity silicon using atomic layer deposition (ALD) techniques. Two metallic coplanar lines patterned on HfZrO having different lengths have been used to determine the effective permittivity and wave propagation constant in HfZrO in the frequency range 1-14 GHz, hence covering the L, S, C, X and (part of the) Ku bands. We have observed a significant modulation of the effective permittivity when a bias voltage is applied within the range 0-5 V, with an almost constant increase of 27% in a frequency range of 8 GHz. We have also extracted the attenuation constant, phase constant and loss tangent: the losses due to the thin HfZrO ferroelectric layer increase of maximum 21% at 5 V, which represents the saturation upper limit for ferroelectric’s polarization. These results could have a significant impact on effective design of ferroelectric-based microwave circuits with tunable characteristics.

ACS Style

M. Aldrigo; M. Dragoman; S. Iordanescu; F. Nastase; S. Vulpe; A. Dinescu; D. Vasilache. Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon. IEEE Access 2019, 7, 136686 -136693.

AMA Style

M. Aldrigo, M. Dragoman, S. Iordanescu, F. Nastase, S. Vulpe, A. Dinescu, D. Vasilache. Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon. IEEE Access. 2019; 7 (99):136686-136693.

Chicago/Turabian Style

M. Aldrigo; M. Dragoman; S. Iordanescu; F. Nastase; S. Vulpe; A. Dinescu; D. Vasilache. 2019. "Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon." IEEE Access 7, no. 99: 136686-136693.

Journal article
Published: 13 February 2019 in IEEE Electron Device Letters
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ACS Style

M. Yasir; M. Aldrigo; M. Dragoman; A. Dinescu; M. Bozzi; S. Iordanescu; D. Vasilache. Integration of Antenna Array and Self-Switching Graphene Diode for Detection at 28 GHz. IEEE Electron Device Letters 2019, 40, 628 -631.

AMA Style

M. Yasir, M. Aldrigo, M. Dragoman, A. Dinescu, M. Bozzi, S. Iordanescu, D. Vasilache. Integration of Antenna Array and Self-Switching Graphene Diode for Detection at 28 GHz. IEEE Electron Device Letters. 2019; 40 (4):628-631.

Chicago/Turabian Style

M. Yasir; M. Aldrigo; M. Dragoman; A. Dinescu; M. Bozzi; S. Iordanescu; D. Vasilache. 2019. "Integration of Antenna Array and Self-Switching Graphene Diode for Detection at 28 GHz." IEEE Electron Device Letters 40, no. 4: 628-631.

Accepted manuscript
Published: 15 August 2018 in Nanotechnology
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HfZrO ferroelectrics with a thickness of 6 nm were grown directly on Si using atomic layer deposition, top and bottom metallic electrodes being subsequently deposited by electron-beam metallization techniques. Depending on the polarity of the ±10 V poling voltages, the current-voltage dependence of these tunneling diodes shows a rectification behavior for different polarizations, the ON-OFF ratio being about 104. Because the currents are at mA level, the HfZrO tunneling diodes can be coupled to an antenna array and harvest electromagnetic energy at 26 GHz (a bandwidth designated for Internet of Things-IoT), with a responsivity of 63 V/W and a NEP of 4 nW/Hz 0.5.

ACS Style

Mircea L Dragoman; Mircea Modreanu; Ian M Povey; Martino Aldrigo; Adrian Dinescu; Daniela Dragoman. Electromagnetic energy harvesting based on HfZrO tunneling junctions. Nanotechnology 2018, 29, 445203 .

AMA Style

Mircea L Dragoman, Mircea Modreanu, Ian M Povey, Martino Aldrigo, Adrian Dinescu, Daniela Dragoman. Electromagnetic energy harvesting based on HfZrO tunneling junctions. Nanotechnology. 2018; 29 (44):445203.

Chicago/Turabian Style

Mircea L Dragoman; Mircea Modreanu; Ian M Povey; Martino Aldrigo; Adrian Dinescu; Daniela Dragoman. 2018. "Electromagnetic energy harvesting based on HfZrO tunneling junctions." Nanotechnology 29, no. 44: 445203.

Journal article
Published: 02 August 2018 in Physica E: Low-dimensional Systems and Nanostructures
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We show experimentally that current rectification occurs in planar ferroelectric Zr-doped HfO2/Si heterostructures having a thickness of 6 nm. When the applied electric field is sufficiently high, so that the polarization direction in the ferroelectric layer switches, and thus the potential barriers decrease, a strong nonlinear current flows through this ambipolar planar device. Current rectification is therefore achieved, with potential applications in electromagnetic energy harvesting. On illumination with white light, a photoresponse is observed for both bias polarizations.

ACS Style

Mircea Dragoman; Mircea Modreanu; Ian M. Povey; Sergiu Iordanescu; Martino Aldrigo; Adrian Dinescu; Dan Vasilache; Cosmin Romanitan; Daniela Dragoman. Current rectification effects in 6 nm thick Hf Zr1-Oy ferroelectrics/Si planar heterostructures. Physica E: Low-dimensional Systems and Nanostructures 2018, 104, 241 -246.

AMA Style

Mircea Dragoman, Mircea Modreanu, Ian M. Povey, Sergiu Iordanescu, Martino Aldrigo, Adrian Dinescu, Dan Vasilache, Cosmin Romanitan, Daniela Dragoman. Current rectification effects in 6 nm thick Hf Zr1-Oy ferroelectrics/Si planar heterostructures. Physica E: Low-dimensional Systems and Nanostructures. 2018; 104 ():241-246.

Chicago/Turabian Style

Mircea Dragoman; Mircea Modreanu; Ian M. Povey; Sergiu Iordanescu; Martino Aldrigo; Adrian Dinescu; Dan Vasilache; Cosmin Romanitan; Daniela Dragoman. 2018. "Current rectification effects in 6 nm thick Hf Zr1-Oy ferroelectrics/Si planar heterostructures." Physica E: Low-dimensional Systems and Nanostructures 104, no. : 241-246.

Journal article
Published: 22 May 2018 in IEEE Transactions on Electron Devices
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In this paper, the first demonstration of a bow-tie antenna integrated with a metal-insulator-metal (MIM) diode for electromagnetic energy harvesting in the V-band (i.e., 40-75 GHz) is presented. We have designed, simulated, fabricated, and fully characterized a 60-GHz rectifying antenna (rectenna) based on a vertical Au-HfO₂-Pt MIM diode with reduced differential resistance. The dielectric used for the MIM structure is a 6-nm-thick amorphous HfO₂ grown by atomic layer deposition. For the fabricated MIM device, we report here a current density of 3 x 10⁴ A/cm² that exceeds the previous values presented in the literature. The vertical MIM-based rectenna is able to efficiently harvest up to 250 μV from an impinging modulated millimeter-wave signal with -20 dBm of available power, thus offering a voltage responsivity of over 5 V/W. The reported results indicate that the proposed approach is well suited for future low-power solutions much sought after for the energetically autonomous 5G terminal equipment.

ACS Style

Martino Aldrigo; Mircea Dragoman; Mircea Modreanu; Ian Povey; Sergiu Iordanescu; Dan Vasilache; Adrian Dinescu; Mazen Shanawani; Diego Masotti. Harvesting Electromagnetic Energy in the ${V}$ -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode. IEEE Transactions on Electron Devices 2018, 65, 2973 -2980.

AMA Style

Martino Aldrigo, Mircea Dragoman, Mircea Modreanu, Ian Povey, Sergiu Iordanescu, Dan Vasilache, Adrian Dinescu, Mazen Shanawani, Diego Masotti. Harvesting Electromagnetic Energy in the ${V}$ -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode. IEEE Transactions on Electron Devices. 2018; 65 (7):2973-2980.

Chicago/Turabian Style

Martino Aldrigo; Mircea Dragoman; Mircea Modreanu; Ian Povey; Sergiu Iordanescu; Dan Vasilache; Adrian Dinescu; Mazen Shanawani; Diego Masotti. 2018. "Harvesting Electromagnetic Energy in the ${V}$ -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode." IEEE Transactions on Electron Devices 65, no. 7: 2973-2980.

Research article
Published: 09 November 2017 in IET Microwaves, Antennas & Propagation
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In this study, the authors present an original way to combine two promising technologies: time-modulated arrays (TMAs) and two-dimensional (2D) materials. The potentialities of TMAs are strongly enhanced by the exploitation of 2D-based radiators, in particular, molybdenum disulphide (MoS2). The great ON/OFF ratio of MoS2 under the application of low bias voltages (up to 5 V in the case of monolayer materials) would allow creating antenna arrays with switching properties, i.e. selecting just a few of the array elements to radiate. This would represent a further degree of freedom in beam-forming for wireless engineering applications. The proposed 2D-TMA finds an application in high-frequency RFID technology combined with wireless sensor networks. Throughout the study, the authors will show the benefits obtained from merging TMAs and 2D materials technology; furthermore, the authors will provide some experimental results on multi-layer MoS2 characterisation and a theoretical prediction of the link budget performance in a RFID link. Both simulation and material measurement results are encouraging, opening the path to further research in high-performance sensing networks that exploit the most innovative results in the domain of materials engineering.

ACS Style

Martino Aldrigo; Diego Masotti; Mircea Dragoman. Smart two‐dimensional material‐based time modulated array for RFID applications. IET Microwaves, Antennas & Propagation 2017, 11, 2267 -2272.

AMA Style

Martino Aldrigo, Diego Masotti, Mircea Dragoman. Smart two‐dimensional material‐based time modulated array for RFID applications. IET Microwaves, Antennas & Propagation. 2017; 11 (15):2267-2272.

Chicago/Turabian Style

Martino Aldrigo; Diego Masotti; Mircea Dragoman. 2017. "Smart two‐dimensional material‐based time modulated array for RFID applications." IET Microwaves, Antennas & Propagation 11, no. 15: 2267-2272.

Research article
Published: 22 May 2017 in IET Microwaves, Antennas & Propagation
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The authors propose a phased patch-antenna array working in the X-band (i.e. 8–12 GHz), in which the beam-steering is obtained by means of two-terminal non-volatile resistive switches (or memristors). These novel components have a simple design and a tunable resistance (suitable for electromagnetic matching), and could replace other volatile switching-type devices (such as PIN diodes, MEMS, etc.), providing good radiofrequency (RF) performance and low-power consumption. They also offer the advantage of non-volatility state, i.e. the controlling signals do not need to be applied continuously, which entails a decrease of the power consumption and a reduction of antenna's sensitivity to power outages. The paper models a simple non-volatile resistive switch working in the microwave and millimetre frequency bands, then simulates, based on these switches, a frequency-tunable dipole antenna and a double patch-antenna array with beam steering capabilities. The authors obtained a multi-resonant array, which exhibits a maximum steering angle of ±28°. They also report the fabrication and characterisation of a resistive switch, based on TiO2−x that shows promising performance for high endurance and retention, with low insertion loss and high isolation. The results of this study represent the starting point for a new family of microwave tunable devices.

ACS Style

Mircea Dragoman; Martino Aldrigo; Gina Adam. Phased antenna arrays based on non‐volatile resistive switches. IET Microwaves, Antennas & Propagation 2017, 11, 1169 -1173.

AMA Style

Mircea Dragoman, Martino Aldrigo, Gina Adam. Phased antenna arrays based on non‐volatile resistive switches. IET Microwaves, Antennas & Propagation. 2017; 11 (8):1169-1173.

Chicago/Turabian Style

Mircea Dragoman; Martino Aldrigo; Gina Adam. 2017. "Phased antenna arrays based on non‐volatile resistive switches." IET Microwaves, Antennas & Propagation 11, no. 8: 1169-1173.

Journal article
Published: 06 March 2017 in Applied Physics Letters
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This paper presents the applications of the Hf0.3Zr0.7O2ferroelectric with a thickness of 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in the X band when the low bias voltages in the range −3 V–+3 V are applied. In this respect, we show that a bandpass filter shifts its central frequency located at 10 GHz with 3 GHz, a phase shifter produces a phase difference of about 60 degrees in the X band, while the antenna array formed by two patched antennas is steering its lobe with ±32° at 10 GHz. These results open the way for the tunability of high frequency devices for very low power applications, which represent one of the most challenging issues in applied physics.

ACS Style

Mircea Dragoman; Martino Aldrigo; Mircea Modreanu; Daniela Dragoman. Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2ferroelectric at very low applied voltages. Applied Physics Letters 2017, 110, 103104 .

AMA Style

Mircea Dragoman, Martino Aldrigo, Mircea Modreanu, Daniela Dragoman. Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2ferroelectric at very low applied voltages. Applied Physics Letters. 2017; 110 (10):103104.

Chicago/Turabian Style

Mircea Dragoman; Martino Aldrigo; Mircea Modreanu; Daniela Dragoman. 2017. "Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2ferroelectric at very low applied voltages." Applied Physics Letters 110, no. 10: 103104.

Journal article
Published: 12 September 2016 in Applied Physics Letters
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In this paper, we propose a graphene rectenna that encompasses two distinct functions in a single device, namely, antenna and rectifier, which till now were two separate components. In this way, the rectenna realizes an efficient energy harvesting technique due to the absence of impedance mismatch between antenna and diode. In particular, we have obtained a maximum conversion efficiency of 58.43% at 897 GHz for the graphene rectenna on n-doped GaAs, which is a very good value, close to the performance of an RF harvesting system. A comparison with a classical metallic antenna with an HfO2-based metal-insulator-metal diode is also provided.

ACS Style

Mircea Dragoman; Martino Aldrigo. Graphene rectenna for efficient energy harvesting at terahertz frequencies. Applied Physics Letters 2016, 109, 113105 .

AMA Style

Mircea Dragoman, Martino Aldrigo. Graphene rectenna for efficient energy harvesting at terahertz frequencies. Applied Physics Letters. 2016; 109 (11):113105.

Chicago/Turabian Style

Mircea Dragoman; Martino Aldrigo. 2016. "Graphene rectenna for efficient energy harvesting at terahertz frequencies." Applied Physics Letters 109, no. 11: 113105.

Text
Published: 28 March 2016 in Journal of Applied Physics
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In this paper, we present the experimental results obtained in the microwave frequency range using an electromagnetic band gap (EMBG) resonator covered with carbon nanotubes(CNTs) and dedicated to CH4 gas detection. The multi-walled CNTs layer is decorated with gold nanoislands (with sizes between 2 nm and 20 nm) and deposited over the EMBG resonator. The microwave measurements of the CNT-based EMBG resonator in air (no gas) and kept for 60 min inside the chamber filled with CH4 demonstrate a shift in the resonance frequency of about 139 MHz and a phase shift of about 9.63°. A very good sensitivity of about 4.58% was obtained from scattering parameters measurements. A new device for CH4 detection was then fabricated and tested.

ACS Style

Alina Cismaru; Martino Aldrigo; Antonio Radoi; Mircea Dragoman. Carbon nanotube-based electromagnetic band gap resonator for CH4 gas detection. Journal of Applied Physics 2016, 119, 124504 .

AMA Style

Alina Cismaru, Martino Aldrigo, Antonio Radoi, Mircea Dragoman. Carbon nanotube-based electromagnetic band gap resonator for CH4 gas detection. Journal of Applied Physics. 2016; 119 (12):124504.

Chicago/Turabian Style

Alina Cismaru; Martino Aldrigo; Antonio Radoi; Mircea Dragoman. 2016. "Carbon nanotube-based electromagnetic band gap resonator for CH4 gas detection." Journal of Applied Physics 119, no. 12: 124504.

Journal article
Published: 28 July 2015 in Journal of Applied Physics
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ACS Style

Mircea Dragoman; Alina Cismaru; Martino Aldrigo; Antonio Radoi; Daniela Dragoman. Switching microwaves via semiconductor-isolator reversible transition in a thin-film of MoS2. Journal of Applied Physics 2015, 118, 045710 .

AMA Style

Mircea Dragoman, Alina Cismaru, Martino Aldrigo, Antonio Radoi, Daniela Dragoman. Switching microwaves via semiconductor-isolator reversible transition in a thin-film of MoS2. Journal of Applied Physics. 2015; 118 (4):045710.

Chicago/Turabian Style

Mircea Dragoman; Alina Cismaru; Martino Aldrigo; Antonio Radoi; Daniela Dragoman. 2015. "Switching microwaves via semiconductor-isolator reversible transition in a thin-film of MoS2." Journal of Applied Physics 118, no. 4: 045710.

Journal article
Published: 13 April 2015 in Applied Physics Letters
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ACS Style

Mircea Dragoman; Dan Neculoiu; Alina-Cristina Bunea; George Deligeorgis; Martino Aldrigo; D. Vasilache; A. Dinescu; George Konstantinidis; Davide Mencarelli; Luca Pierantoni; Mircea Modreanu. A tunable microwave slot antenna based on graphene. Applied Physics Letters 2015, 106, 153101 .

AMA Style

Mircea Dragoman, Dan Neculoiu, Alina-Cristina Bunea, George Deligeorgis, Martino Aldrigo, D. Vasilache, A. Dinescu, George Konstantinidis, Davide Mencarelli, Luca Pierantoni, Mircea Modreanu. A tunable microwave slot antenna based on graphene. Applied Physics Letters. 2015; 106 (15):153101.

Chicago/Turabian Style

Mircea Dragoman; Dan Neculoiu; Alina-Cristina Bunea; George Deligeorgis; Martino Aldrigo; D. Vasilache; A. Dinescu; George Konstantinidis; Davide Mencarelli; Luca Pierantoni; Mircea Modreanu. 2015. "A tunable microwave slot antenna based on graphene." Applied Physics Letters 106, no. 15: 153101.

Journal article
Published: 21 September 2014 in Journal of Applied Physics
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ACS Style

Martino Aldrigo; Mircea Dragoman; Daniela Dragoman. Smart antennas based on graphene. Journal of Applied Physics 2014, 116, 114302 .

AMA Style

Martino Aldrigo, Mircea Dragoman, Daniela Dragoman. Smart antennas based on graphene. Journal of Applied Physics. 2014; 116 (11):114302.

Chicago/Turabian Style

Martino Aldrigo; Mircea Dragoman; Daniela Dragoman. 2014. "Smart antennas based on graphene." Journal of Applied Physics 116, no. 11: 114302.

Review
Published: 18 August 2014 in Electronics
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In this paper, we describe some promising solutions to the modern need for wearable, energy-aware, miniaturized, wireless systems, whose typical envisaged application is a body area network (BAN). To reach this goal, novel materials are adopted, such as fabrics, in place of standard substrates and metallizations, which require a systematic procedure for their electromagnetic characterization. Indeed, the design of such sub-systems represents a big issue, since approximate approaches could result in strong deviations from the actual system performance. To face this problem, we demonstrate our design procedure, which is based on the concurrent use of electromagnetic software tools and nonlinear circuit-level techniques, able to simultaneously predict the actual system behavior of an antenna system, consisting of the radiating and of the nonlinear blocks, at the component level. This approach is demonstrated for the design of a fully-wearable tri-band rectifying antenna (rectenna) and of a button-shaped, electrically-small antenna deploying a novel magneto-dielectric substrate. Simulations are supported by measurements, both in terms of antenna port parameters and far-field results.

ACS Style

Alessandra Costanzo; Diego Masotti; Martino Aldrigo. Compact, Wearable Antennas for Battery-Less Systems Exploiting Fabrics and Magneto-Dielectric Materials. Electronics 2014, 3, 474 -490.

AMA Style

Alessandra Costanzo, Diego Masotti, Martino Aldrigo. Compact, Wearable Antennas for Battery-Less Systems Exploiting Fabrics and Magneto-Dielectric Materials. Electronics. 2014; 3 (3):474-490.

Chicago/Turabian Style

Alessandra Costanzo; Diego Masotti; Martino Aldrigo. 2014. "Compact, Wearable Antennas for Battery-Less Systems Exploiting Fabrics and Magneto-Dielectric Materials." Electronics 3, no. 3: 474-490.

Journal article
Published: 14 November 2013 in Journal of Applied Physics
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ACS Style

Martino Aldrigo; Mircea Dragoman; Alessandra Costanzo; Daniela Dragoman. Graphene as a high impedance surface for ultra-wideband electromagnetic waves. Journal of Applied Physics 2013, 114, 184308 .

AMA Style

Martino Aldrigo, Mircea Dragoman, Alessandra Costanzo, Daniela Dragoman. Graphene as a high impedance surface for ultra-wideband electromagnetic waves. Journal of Applied Physics. 2013; 114 (18):184308.

Chicago/Turabian Style

Martino Aldrigo; Mircea Dragoman; Alessandra Costanzo; Daniela Dragoman. 2013. "Graphene as a high impedance surface for ultra-wideband electromagnetic waves." Journal of Applied Physics 114, no. 18: 184308.