Through nanoscratch experiments with a spherical diamond indenter, a contrastive study of the nanotribological properties of Ga- and N-faced gallium nitride (GaN) samples was carried out. Nanoindentation results revealed that the elastic modulus of the Ga-faced GaN sample was slightly higher than that of N-faced GaN sample. Particularly, Ga- and N-faced GaN samples exhibited rather different nanotribological properties, and the Ga-faced sample showed a stronger wear resistance. The study indicated that the critical normal load required to cause material removal of N-faced GaN sample was almost two times that of Ga-faced GaN sample. Both Ga- and N-faces exhibited a rather low frictional coefficient at the elastic and elastoplastic stages of material, e.g., ~0.06 for Ga-face and ~0.075 for N-face when scratching under the progressive normal load. Combined with transmission electron microscopy and X-ray photoelectron spectroscopy, we speculated that, except for the intrinsic atomic arrangements attributed to the non-reverse crystallographic symmetry of c-plane wurtzite GaN, the difference of nanotribological properties between Ga- and N-faces may also be related to the preferential formation of a native oxide layer and a slight lattice damage layer on the N-faced GaN surface. This study can enrich the understanding of the nanotribological properties of Ga- and N-polar-faced bulk monocrystalline GaN materials fabricated by the conventional technique.

In this work, the nanomechanical properties involving the indentation size effect (ISE) and yield strength of a surface-modified layer of 18CrNiMo7-6 steel after case hardening were investigated via nanoindentation experiments. The experimental results showed that the hardness increased with an increase in strain rate; the contact stiffness versus indentation depth curves take the form of upper convexity due to residual compressive stress relaxation. On the basis of the Ruiz-Moreno model, a modified model considering the cutoff parameter as a function of indentation depth was proposed. This model was able to better describe the ISE of the surface-modified layer. With the Hough transform error angle of 0.1° as the critical value (h_0.1° is the corresponding depth), when h > h_0.1°, the yield strength calculated by the Ma model started to disperse at the depth of h_0.1°. These results provide useful insight into the local mechanical properties of 18CrNiMo7-6 steel after carburizing and quenching treatment.

Molecular dynamics (MD) simulation of nanoscratching with a spherical diamond abrasive was performed to investigate the role of water molecular film on the surface nanotribological characteristics and subsurface lattice damage of GaN (0001) at the atomic level. The simulation results indicate that the tangential and normal forces exhibited no significant variation trend with the increase in water film thickness. Inducing a water film can alleviate the material pile-up during scratching, and the GaN surface obtained the lowest friction coefficient and wear volume when the water film thickness reached 3 nm, primarily due to the enhanced lubrication and the heat absorption by the water film in this case. Water-film-covered GaN exhibited a thinner subsurface damage layer than the bare GaN, and the damage layer thickness decreased with the increase in water film thickness for various scratching depths of 1 to 4 nm. For each scratching depth, there was an optimal water film thickness causing the minimum number of amorphization atoms. Nevertheless, the water film failed to inhibit the formation and propagation of dislocations in the scratching process, and water-film-covered GaN exhibited more dislocations than the bare one. This research has the potential to expand the comprehension of water-mediated nanotribology and the ultra-precision machining procedures of GaN.

Laser assistance offers a promising pathway for high-efficiency and low-damage ultraprecision grinding for difficult-to-machine hard-brittle semiconductors. This study employs atomistic simulation to investigate the surface removal and subsurface damage mechanisms of C-, M-, and A-plane AlN workpieces during single-grit laser-assisted nanogrinding (LAG). The results indicate that LAG reduces material pileup, thereby decreasing the grit–workpiece contact area and grinding resistance. By leveraging laser-induced thermal effects to enhance atomic plastic flow, LAG evidently achieves a higher material removal rate than conventional grinding (CG). Grinding the C-plane along a orientation yields the lowest surface roughness, although this improvement is not useful for the M- and A-planes. Tangential force increases linearly with grinding depth in both methods, but LAG exhibits a lower rate of increase. LAG consistently produces lower grinding forces and friction coefficients and results in lower dislocation densities in C- and A-plane AlN workpieces at nearly all grinding depths. The C-plane exhibits the thinnest damage layer, followed by the M-plane, with the A-plane the thickest. Increasing the laser power density lowers the grinding force and enhances the removal efficiency. Optimal power density minimizes subsurface damage and improves surface quality; however, excessive power density exacerbates damage. This work provides valuable insights for developing high-efficiency, low-damage LAG techniques for hard-brittle semiconductors.