Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n⁻/n⁺-GaN structure. As a consequence, the breakdown voltage of 54.9 V at 1 μA and cut-off frequency of 587.5 GHz at zero bias were obtained. A 120 GHz frequency-doubler module based on the GaN SBD chain was designed and fabricated. When driven with 500 mW input power in a continuous wave, the output power of the frequency-doubler module was 15.1 mW at 120 GHz. Moreover, the experiments show that the frequency-doubler module can endure an input power of 2 W. In addition, it is worth noting that the SBD chain works well at an anode temperature of 337.2 °C.

Terahertz scattering-scanning near-field optical microscopy (THz s-SNOM), combining the best features of terahertz technology and s-SNOM technology, has shown unique advantages in various applications. Consequently, building a model to characterize near-field interactions and investigate practical issues has become a popular topic in THz s-SNOM research. In this study, a finite element model (FEM) is proposed to quantify the near-field interactions, and to investigate the edge effect and antenna effect in THz s-SNOM. Our results indicate that the proposed model can give us a better understanding of the near-field interactions and direct the parameter design of the probe for THz s-SNOM.

Based on a W-band high-power source, two schemes are proposed to realize a 335 GHz frequency multiplier source. The first scheme involves producing a 335 GHz signal with a two-stage doubler. The first doubler adopts two-way power-combined technology and the second stage is a 335 GHz doubler using a balanced circuit to suppress the odd harmonics. The measured output power was about 17.9 and 1.5 dBm at 167.5 and 335 GHz, respectively. The other scheme involves producing a 335 GHz signal with a single-stage quadrupler built on 50 µm thick quartz circuit adopting an unbalanced structure. The advantage of the unbalanced structure is that it can provide bias to the diodes without an on-chip capacitor, which is hard to realize with discrete devices. The measured output power was about 5.8 dBm at 337 GHz when driven with 22.9 dBm. Such 335 GHz frequency multiplier sources are widely used in terahertz imaging, radiometers, and so on.

In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides to eliminate the phase difference between the two output ports of the T-junction power divider, so as to achieve in-phase power combining with a concise structure. The frequency doubler was fabricated on a 50 μm thick AlN high-thermal-conductivity substrate to reduce the impact of the thermal effect on the performance. The measured results show that the doubler exhibits a conversion efficiency of 11–31.3% in the 165–180 GHz band under 350–400 mW of input power, and a 118 mW peak output power with a 31.3% efficiency was measured at 174 GHz `when the input power was 376 mW. A good agreement was achieved between the simulation results and the measured performance of the doubler, which proves the effectiveness of the proposed in-phase power-combining structure.

A global design method for a terahertz monolithic integrated frequency multiplier is proposed. Compared with a traditional independent design, the method in this paper adopts overall optimization and combines the device with the circuit design. The advantage is that it provides a customized design for frequency multipliers according to specifications. On the basis of the gallium arsenide process of the Institute of Microelectronics, Chinese Academy of Sciences, two types of Schottky diodes have been developed to meet the needs of different designs. On the one hand, a Schottky diode with a 3 μm junction’s diameter was used in the design of the 200 GHz balanced doubler and, on the other hand, a diode with a 5 μm diameter was used in the 215 GHz unbalanced tripler. The measured results indicated that the output power of the doubler was more than 250 μW at 180~218 GHz, and the maximum was 950 μW at 198 GHz when driven with 12.3 mW, whereas that of the tripler was above 5 mW at 210~218 GHz and the maximum exceeded 10 mW. Such frequency multiplier sources could be widely used in terahertz imaging, radiometers, and so on.

To effectively reduce the requirement of Local Oscillator (LO) power, this paper presents the design and measurement of a biased sub-harmonic mixer working at the center frequency of 0.67 THz in hybrid integration. Two discrete Schottky diodes were placed across the LO waveguide in anti-series configuration on a 50 μm thick quartz-glass substrate, and chip capacitors were not required. At the driven of 3 mW@335 GHz and 0.35 V, the mixer had a minimum measured Signal Side-Band (SSB) conversion loss of 15.3 dB at the frequency of 667 GHz. The typical conversion loss is 18.2 dB in the band of 650 GHz to 690 GHz.