The rapid change of topology is one of the most important factors affecting the performance of the routing protocols of flying ad hoc networks (FANETs). A routing scheme suitable for highly dynamic mobile ad hoc networks is proposed for the rapid change of topology in complex scenarios. In the scheme moving nodes sense changes of the surrounding network topology periodically, and the current mobile scenario is confirmed according to the perceived result. Furthermore, a suitable routing protocol is selected for maintaining network performances at a high level. The concerned performance metrics are packet delivery ratio, network throughput, average end-to-end delay and average jitter. The experiments combine the random waypoint model, the reference point group mobility model and the pursue model to a chain scenario, and simulate the large changes of the network topology. Results show that an appropriate routing scheme can adapt to rapid changes in network topology and effectively improve network performance.

Terahertz scattering-scanning near-field optical microscopy (THz s-SNOM), combining the best features of terahertz technology and s-SNOM technology, has shown unique advantages in various applications. Consequently, building a model to characterize near-field interactions and investigate practical issues has become a popular topic in THz s-SNOM research. In this study, a finite element model (FEM) is proposed to quantify the near-field interactions, and to investigate the edge effect and antenna effect in THz s-SNOM. Our results indicate that the proposed model can give us a better understanding of the near-field interactions and direct the parameter design of the probe for THz s-SNOM.

In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides to eliminate the phase difference between the two output ports of the T-junction power divider, so as to achieve in-phase power combining with a concise structure. The frequency doubler was fabricated on a 50 μm thick AlN high-thermal-conductivity substrate to reduce the impact of the thermal effect on the performance. The measured results show that the doubler exhibits a conversion efficiency of 11–31.3% in the 165–180 GHz band under 350–400 mW of input power, and a 118 mW peak output power with a 31.3% efficiency was measured at 174 GHz `when the input power was 376 mW. A good agreement was achieved between the simulation results and the measured performance of the doubler, which proves the effectiveness of the proposed in-phase power-combining structure.

To effectively reduce the requirement of Local Oscillator (LO) power, this paper presents the design and measurement of a biased sub-harmonic mixer working at the center frequency of 0.67 THz in hybrid integration. Two discrete Schottky diodes were placed across the LO waveguide in anti-series configuration on a 50 μm thick quartz-glass substrate, and chip capacitors were not required. At the driven of 3 mW@335 GHz and 0.35 V, the mixer had a minimum measured Signal Side-Band (SSB) conversion loss of 15.3 dB at the frequency of 667 GHz. The typical conversion loss is 18.2 dB in the band of 650 GHz to 690 GHz.

A scattering-scanning near-field microscope, integrated with a 100 GHz zero-intermediate frequency radar system, is proposed and demonstrated. Near-field imaging with a resolution of 140 nm is achieved through the utilization of a fundamental mixer. The non-focusing structure simplifies the original focusing optical path and, combined with single-source zero intermediate frequency radar technology, streamlines the overall system structure while ensuring data collection efficiency. This facilitates subsequent system integration. The impacts on the actual excitation and collection of near-field signals were compared between the focusing mode and the non-focusing mode. Subsequently, near-field imaging in the non-focusing mode was successfully accomplished. A signal-to-noise ratio of 35 dB in near-field amplitude images is attained by using commercial probes. This indicate that the unique system structure can provide a new solution for low-terahertz bans scanning near-field microscopes.

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (C _max/C _min), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.