InGaN-based red micro-light-emitting diodes (µLEDs) of different sizes were prepared in this work. The red GaN epilayers were grown on 4-inch sapphire substrates through metal-organic chemical vapor deposition (MOCVD). Etching, sidewall treatment, and p- and n-contact deposition were involved in the fabrication process. Initially, the etching process would cause undesirable damage to the GaN sidewalls, which leads to an increase in leakage current. Hence, we employed KOH wet treatment to rectify the defects on the sidewalls and conducted a comparative and systematic analysis of electrical as well as optical properties. We observed that the µLEDs with a size of 5 µm exhibited a substantial leakage current, which was effectively mitigated by the application of KOH wet treatment. In terms of optical performance, the arrays with KOH demonstrated improved light output power (LOP). Additionally, while photoelectric performance exhibited a decline with increased current density, the devices treated with KOH consistently outperformed their counterparts in terms of optoelectronic efficiency. It is noteworthy that the optimized devices displayed enhanced photoelectric characteristics without significantly altering their original peak wavelength and FWHM. Our findings point to the elimination of surface non-radiative recombination by KOH wet treatment, thereby enhancing the performance of small-sized red µLEDs, which has significant potential in realizing full-color micro-displays in near-eye projection applications.

AlN devices have the potential to outperform current GaN devices, especially in the high-voltage region, thanks to AlN's larger critical electric field and thermal conductivity. In order for the AlN-based power diodes to be realized and performance to be demonstrated, high-quality AlN crystals would be the prerequisite. In this article, significantly improved AlN quality has been demonstrated through high-temperature treatment of AlN thin layers at high temperatures in the range of 1670-1730 °C, followed by regrowth of AlN layers on top. The produced AlN layer shows much improved crystalline quality when compared to AlN layer without thermal treatment. The thermal treatment of AlN nucleation layers recrystallizes the AlN materials and results in a significant reduction of the full-width at half-maximum (FWHM) values of X-ray rocking curves of AlN (002) and (102) planes. The annealing of AlN nucleation also produced much pronounced atomic step features and improves the transmittance for the nucleation layers. Regrowth of AlN templates on such annealed nucleation improves AlN crystalline quality further, producing high-quality templates for power diode applications.

A comprehensive insight into the electronic and optical properties of small-lattice-mismatched InSe-GeTe heterobilayer (HBL) is performed based on the density functional theory (DFT) with van der Waals corrections from first-principles perspective. The optimization of most stable geometric stacking mode for the InSe-GeTe HBL is demonstrated. In addition, it is found that the InSe-GeTe HBL forms a type-II heterostructure of staggered-gap band alignment, resulting in an indirect band gap of 0.78 eV, which could be employed as a separator for electron-hole pairs. Moreover, the influence of biaxial strain on the electronic and optical properties of the InSe-GeTe HBL are systematically explored by calculating the band structures, density of states (PDOS), electron density differences, and optical absorption spectra of InSe-GeTe HBL under compressive and tensile biaxial strains. The results indicate that the electronic structures and optical performance of InSe-GeTe HBL could be modulated by changing the biaxial strain conveniently. Our findings provide new opportunities for the novel InSe-GeTe HBL to be applied in the electronic and optoelectronic fields.

This study investigated the relationship between the superconducting properties, electrical properties, sputtering process parameters, and post-growth annealing of NbN films. Four series of NbN films were deposited by DC magnetron sputtering using different process parameters. With the assistance of a four-probe method, the superconducting performance presented first an increase and then a decreasing trend as the resistance of the prepared films increased, which could be attributed to the variation of the N/Nb ratio in the films. This correlation implied that it is very challenging to fabricate films with both high Tc and high resistance or high Tc and low resistance by adjusting the sputtering process parameters. In order to overcome these bottlenecks, a series of films were deposited on Si, GaN/Si, SiN/Si, AlN/Si, and AlN/sapphire substrates, and the film deposited on Si was annealed at 900 °C. Annealing reduced the stress of the films on the buffer layer and increased the grain size and crystallinity of the films, except for the films on the GaN/Si substrates. This resulted in a significant decrease in the resistivity of the film and a significant increase in the superconducting transition temperature.

GaN-based high electron mobility transistors (HEMTs) are shown to have excellent properties, showing themselves to perform well among the throng of solid-state power amplifiers. They are particularly promising candidates for next-generation mobile communication applications due to their high power density, frequency, and efficiency. However, the radio-frequency (RF) dispersion aroused by a high surface-state density inherent in nitrides causes the degradation of GaN devices’ performance and reliability. Although various dispersion suppression strategies have been proposed successively—including surface treatment, passivation, field plate, cap layer, and Si surface doping—outcomes were not satisfactory for devices with higher frequencies until the emergence of a novel N-polar deep recess (NPDR) structure broke this deadlock. This paper summarizes the generation of dispersion, several widespread dispersion containment approaches, and their bottlenecks under high frequencies. Subsequently, we highlight the NPDR structure as a potential substitute, evaluate its technical benefits, and review the continuous exertions in recent years.