This work investigates the effect of an in situ hydrogen plasma treatment on gate bias stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by using atmospheric-pressure PECVD. The H₂ plasma-treated a-IGZO channel has shown significant improvement in bias stress induced instability with a minuscule threshold voltage shift (ΔV _th) of 0.31 and −0.17 V under positive gate bias stress (PBS) and negative gate bias stress (NBS), respectively. With the aid of the energy band diagram, the proposed work demonstrates the formation of negative species O₂ ⁻ and positive species H₂O⁺ in the backchannel under PBS and NBS in addition to ionized oxygen vacancy (V_o) defects at a-IGZO/ZrO₂ interfaces are the reason for gate bias instability which could be effectively suppressed with in situ H₂ plasma treatment. From the experimental result, it is observed that the electrical performance such as field-effect mobility (μ _FE), on-off current ratio (I _on/I _off), and subthreshold swing improved significantly by in situ H₂ plasma treatment with passivation of interface trap density and bulk trap defects.

Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memristor via interface engineering. By incorporating an ultra-thin 2 nm Al ₂ O ₃ interface layer, seven distinct high resistance states with same low resistance state were achieved by controlling reset-stop voltage. In addition, by varying set compliance current, six resistance states with reliability and reproducibility were illustrated. The maximum cycle-to-cycle variability $\sigma /\mu $ (standard deviation/mean) of any resistance state was 28.7% in reset-stop voltage control methods. The multilevel switching characteristics could be attributed to (a) enhancement of on-off ratio resulted due to insertion of Al ₂ O ₃ barrier layer acts as series resistance (b) the gradual electron detrapping from occupied trap sites resulting in multiple intermediate resistance states during reset.

This study examined the effects of school administrative support on teaching practice research programs using the importance–performance analysis (IPA) model. Teachers’ emotions, the importance they attributed to certain elements of the administrative services, and their satisfaction with the service quality of the administrative system were explored. To satisfy teachers’ needs and improve the service quality of administrative support, gaps in service quality between expectations and reality need to be identified. Participants were full-time teachers who had applied for teaching practice research programs at a university in Taiwan. A questionnaire on satisfaction with administrative support was developed and distributed to 102 teachers, 86 of whom returned valid responses. The results were analyzed using a paired t-test, regression analysis, and IPA. The teachers were most concerned about briefings regarding the application process and the administrative services the received, and they were most satisfied with these administrative services (t = 4.595, p < 0.001). Administrative service was the main factor contributing to teachers’ satisfaction. Seminars or workshops on writing and consultation for budgeting were the top priorities to improve the administrative support system. Suggestions for enhancing school administrative services based on these results are also provided.