Fengwen Mu

Dr. Fengwen Mu


Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 January 2020 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
ZCZhe Cheng
Zhe Cheng
FMFengwen Mu
Fengwen Mu
LYLuke Yates
Luke Yates
TSTadatoma Suga
Tadatoma Suga
SGSamuel Graham
Samuel Graham

13 August 2019 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
FMFengwen Mu
Fengwen Mu
ZCZhe Cheng
Zhe Cheng
JSJingjing Shi
Jingjing Shi
SSSeongbin Shin
Seongbin Shin
BXBin Xu
Bin Xu
TSTadatoma Suga
Tadatoma Suga

10 September 2020 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
ZCZhe Cheng
Zhe Cheng
FMFengwen Mu
Fengwen Mu
TYTiangui You
Tiangui You
WXWenhui Xu
Wenhui Xu
JSJingjing Shi
Jingjing Shi
SGSamuel Graham
Samuel Graham

16 August 2018 in Molecules
Verified
Journal Article
Open access
PDF file
Xin WuXin Wu
Xin Wu
FMFengwen Mu
Fengwen Mu
YWYinghui Wang
Yinghui Wang
HZHaiyan Zhao
Haiyan Zhao
DNA detection with high sensitivity and specificity has tremendous potential as molecular diagnostic agents. Graphene and graphene-based nanomaterials, such as graphene nanopore, graphene nanoribbon, graphene oxide, and reduced graphene oxide, graphene-nanoparticle composites, were demonstrated to have unique properties, which have attracted increasing interest towards the application of DNA detection with improved performance. This article comprehensively reviews the most recent trends in DNA detection based on graphene and graphene-related nanomaterials. Based on the current understanding, this review attempts to identify the future directions in which the field is likely to thrive, and stimulate more significant research in this subject.

1 September 2021 in Materials Today Advances
Verified
Journal Article
Open access
Xin WuXin Wu
Xin Wu
FMFengwen Mu
Fengwen Mu
ZLZ. Lin
Z. Lin

13 July 2016 in Applied Physics Express
Verified
Journal Article
Closed access
PDF file
FMFengwen Mu
Fengwen Mu
KIKenichi Iguchi
Kenichi Iguchi
HNHaruo Nakazawa
Haruo Nakazawa
YTYoshikazu Takahashi
Yoshikazu Takahashi
MFMasahisa Fujino
Masahisa Fujino
TSTadatoma Suga
Tadatoma Suga
In this study, the results of direct wafer bonding of SiC–SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273 K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is ∼30% stronger and almost completely recrystallized without oxidation during RTA, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.