DNA detection with high sensitivity and specificity has tremendous potential as molecular diagnostic agents. Graphene and graphene-based nanomaterials, such as graphene nanopore, graphene nanoribbon, graphene oxide, and reduced graphene oxide, graphene-nanoparticle composites, were demonstrated to have unique properties, which have attracted increasing interest towards the application of DNA detection with improved performance. This article comprehensively reviews the most recent trends in DNA detection based on graphene and graphene-related nanomaterials. Based on the current understanding, this review attempts to identify the future directions in which the field is likely to thrive, and stimulate more significant research in this subject.

With the assistance of Pt-catalyzed formic acid vapor, robust Ag-Cu bonding was realized at an ultra-low temperature of 160 °C under 3 MPa for 30 min via the sintering of Ag nanoparticles in situ generated from Ag₂O microparticles. The Cu oxide layer at the interface after bonding can be eliminated, which improves the bond strength and electrical conductivity of the joint. A metallic bond contact between the sintered Ag and the Cu substrate is obtained without interfacial solid solution and intermetallic phases, and the shear strength is comparable to previous bonding at a higher temperature. The bonding mechanisms were figured out by comparing the bonding with and without the Pt-catalyzed formic acid vapor. This ultra-low temperature Ag-Cu bonding method may create more flexibilities in the structure design and material selection for power device integration.

Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasibility, a crystalline AlN film with a root-mean-square (RMS) surface roughness less than ~0.70 nm was deposited on a SiC wafer by a pulsed direct current magnetron sputtering method. Room temperature wafer bonding of SiC-AlN by two surface activated bonding (SAB) methods (standard SAB and modified SAB with Si nano-layer sputtering deposition) was studied. Standard SAB failed in the bonding, while the modified SAB achieved the bonding with a bonding energy of ~1.6 J/m². Both the microstructure and composition of the interface were investigated to understand the bonding mechanisms. Additionally, the surface analyses were employed to confirm the interface investigation. Clear oxidation of the AlN film was found, which is assumed to be the failure reason of direct bonding by standard SAB.

A novel bonding process using Ag agglomerates paste prepared by Ag₂O reduction has been proposed, which solved the problem of Cu substrate oxidation in the conventional Ag₂O sintering process for Cu–Cu bonding. By applying the Ag agglomerate paste to Ag–Ag bonding, a shear strength of 28.3 MPa at 150 °C was obtained. Further studies showed that the optimum sintering temperature was at 225 °C, and a shear strength of 46.4 MPa was obtained. In addition, a shear strength of 20 MPa was obtained at 225 °C for Cu–Cu bonding. Compared to common Ag pastes, the results in this paper revealed that the sintering behavior of Ag agglomerates was unique, and the sintering mechanisms for Ag–Ag and Cu–Cu bonding were also discussed.