Iddo Amit

Dr. Iddo Amit


Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 April 2018 in Advanced Functional Materials
Verified
Journal Article
Open access
PDF file
DDDimitar Dimov
Dimitar Dimov
IAIddo Amit
Iddo Amit
OGOlivier Gorrie
Olivier Gorrie
MBMatthew D. Barnes
Matthew D. Barnes
NTNicola J. Townsend
Nicola J. Townsend
MCMonica Felicia Craciun
Monica Felicia Craciun
There is a constant drive for development of ultrahigh performance multifunctional construction materials by the modern engineering technologies. These materials have to exhibit enhanced durability and mechanical performance, and have to incorporate functionalities that satisfy multiple uses in order to be suitable for future emerging structural applications. There is a wide consensus in the research community that concrete, the most used construction material worldwide, has to be engineered at the nanoscale, where its chemical and physiomechanical properties can be truly enhanced. Here, an innovative multifunctional nanoengineered concrete showing an unprecedented range of enhanced properties when compared to standard concrete, is reported. These include an increase of up to 146% in the compressive and 79.5% in the flexural strength, whilst at the same time an enhanced electrical and thermal performance is found. A surprising decrease in water permeability by nearly 400% compared to normal concrete makes this novel composite material ideally suitable for constructions in areas subject to flooding. The unprecedented gamut of functionalities that are reported in this paper are produced by the addition of water‐stabilized graphene dispersions, an advancement in the emerging field of nanoengineered concrete which can be readily applied in a more sustainable construction industry.

2 November 2017 in Scientific Reports
Verified
Journal Article
Open access
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FRFrancesco Reale
Francesco Reale
PPPawel Palczynski
Pawel Palczynski
IAIddo Amit
Iddo Amit
GJGareth F. Jones
Gareth F. Jones
JMJake Mehew
Jake Mehew
Cecilia MatteviCecilia Mattevi
Cecilia Mattevi
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used direct sulfidization of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.

4 January 2019 in Science Advances
Verified
Journal Article
Open access
PDF file
NPN. Peimyoo
N. Peimyoo
MBM. D. Barnes
M. D. Barnes
JMJake Mehew
Jake Mehew
ASAdolfo De Sanctis
Adolfo De Sanctis
IAIddo Amit
Iddo Amit
FWF. Withers
F. Withers
2D material compatible, writable, and high- k multifunctional oxide facilitates next-generation flexible van der Waals electronics.

15 March 2017 in Advanced Materials
Verified
Journal Article
Open access
PDF file
IAIddo Amit
Iddo Amit
TOTobias J. Octon
Tobias J. Octon
NTNicola J. Townsend
Nicola J. Townsend
FRFrancesco Reale
Francesco Reale
CWC. David Wright
C. David Wright
SRSaverio Russo
Saverio Russo
Transient currents in atomically thin MoTe2 field‐effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge‐trapping dynamics that renders a time‐dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin‐based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.

1 March 2013 in NPG Asia Materials
Verified
Journal Article
Open access
Gil ShalevGil Shalev
Gil Shalev
GLGuy Landman
Guy Landman
IAIddo Amit
Iddo Amit
YRYossi Rosenwaks
Yossi Rosenwaks
ILIlan Levy
Ilan Levy
We report a specific, label-free and real-time detection of femtomolar protein concentrations with a novel type of nanowire-based biosensor. The biosensor is based on an electrostatically formed nanowire, which is conceptually different from a conventional silicon nanowire in its confinement potential, charge carrier distribution, surface states, dopant distribution, moveable channel and geometrical structure. This new biosensor requires standard integrated-circuit processing with relaxed fabrication requirements. The biosensor is composed of an accumulation-type, planar transistor surrounded by four gates, a backgate, front gate and two lateral gates, and it operates in the all-around-depletion mode. Consequently, adjustment of the four gates defines the dimensions and location of the conducting channel. It is shown that lithographically shaped channels of 400 nm in width are reduced to effective widths of 25 nm upon lateral-gate biasing. Device operation is demonstrated for protein-specific binding, and it is found that sensitive detection signals are recorded once the channel width is comparable with the dimensions of the protein. The device performance is discussed and analyzed with the help of three-dimensional electrostatic simulations.

22 October 2012 in ACS Nano
Verified
Journal Article
Closed access
OHOri Hazut
Ori Hazut
AAArunava Agarwala
Arunava Agarwala
IAIddo Amit
Iddo Amit
TSThangavel Subramani
Thangavel Subramani
SZSeva Zaidiner
Seva Zaidiner
RYRoie Yerushalmi
Roie Yerushalmi