A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising a scalable solution to enable future quantum computers. In this paper, a cryogenic control system is proposed, along with the required specifications, for the interface of the classical electronics with the quantum processor. To prove the advantages of such a system, the functionality of key circuit blocks is experimentally demonstrated. The characteristic properties of cryo-CMOS are exploited to design a noise-canceling low-noise amplifier for spin-qubit RF-reflectometry readout and a class-F2,3 digitally controlled oscillator required to manipulate the state of qubits.

We present the first all-digital PLL and polar transmitter for mobile phones. They are part of a single-chip GSM/EDGE transceiver SoC fabricated in a 90 nm digital CMOS process. The circuits are architectured from the ground up to be compatible with digital deep-submicron CMOS processes and be readily integrateable with a digital baseband and application processor. To achieve this, we exploit the new paradigm of a deep-submicron CMOS process environment by leveraging on the fast switching times of MOS transistors, the fine lithography and the precise device matching, while avoiding problems related to the limited voltage headroom. The transmitter architecture is fully digital and utilizes the wideband direct frequency modulation capability of the all-digital PLL. The amplitude modulation is realized digitally by regulating the number of active NMOS transistor switches in accordance with the instantaneous amplitude. The conventional RF frequency synthesizer architecture, based on a voltage-controlled oscillator and phase/frequency detector and charge-pump combination, has been replaced with a digitally controlled oscillator and a time-to-digital converter. The transmitter performs GMSK modulation with less than 0.5/spl deg/ rms phase error, -165 dBc/Hz phase noise at 20 MHz offset, and 10 /spl mu/s settling time. The 8-PSK EDGE spectral mask is met with 1.2% EVM. The transmitter occupies 1.5 mm/sup 2/ and consumes 42 mA at 1.2 V supply while producing 6 dBm RF output power.

We present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process. The transceiver is architectured from the ground up to be compatible with digital deep-submicron CMOS processes and be readily integrated with a digital baseband and application processor. The conventional RF frequency synthesizer architecture, based on the voltage-controlled oscillator and the phase/frequency detector and charge-pump combination, has been replaced with a digitally controlled oscillator and a time-to-digital converter, respectively. The transmitter architecture takes advantage of the wideband frequency modulation capability of the all-digital phase-locked loop with built-in automatic compensation to ensure modulation accuracy. The receiver employs a discrete-time architecture in which the RF signal is directly sampled and processed using analog and digital signal processing techniques. The complete chip also integrates power management functions and a digital baseband processor. Application of the presented ideas has resulted in significant area and power savings while producing structures that are amenable to migration to more advanced deep-submicron processes, as they become available. The entire IC occupies 10 mm/sup 2/ and consumes 28 mA during transmit and 41 mA during receive at 1.5-V supply.

An oscillator topology demonstrating an improved phase noise performance is proposed in this paper. It exploits the time-variant phase noise model with insights into the phase noise conversion mechanisms. The proposed oscillator is based on enforcing a pseudo-square voltage waveform around the LC tank by increasing the third-harmonic of the fundamental oscillation voltage through an additional impedance peak. This auxiliary impedance peak is realized by a transformer with moderately coupled resonating windings. As a result, the effective impulse sensitivity function (ISF) decreases thus reducing the oscillator's effective noise factor such that a significant improvement in the oscillator phase noise and power efficiency are achieved. A comprehensive study of circuit-to-phase-noise conversion mechanisms of different oscillators' structures shows the proposed class-F exhibits the lowest phase noise at the same tank's quality factor and supply voltage. The prototype of the class-F oscillator is implemented in TSMC 65-nm standard CMOS. It exhibits average phase noise of -136 dBc/Hz at 3 MHz offset from the carrier over 5.9-7.6 GHz tuning range with figure-of-merit of 192 dBc/Hz. The oscillator occupies 0.12 mm² while drawing 12 mA from 1.25 V supply.

We propose and demonstrate a 20-ps time-to-digital converter (TDC) realized in 90-nm digital CMOS. It is used as a phase/frequency detector and charge pump replacement in an all-digital phase-locked loop for a fully-compliant Global System for Mobile Communications (GSM) transceiver. The TDC core is based on a pseudodifferential digital architecture that makes it insensitive to nMOS and pMOS transistor mismatches. The time conversion resolution is equal to an inverter propagation delay, which is the finest logic-level regenerative timing in CMOS. The TDC is self calibrating with the estimation accuracy better than 1%. It additionally serves as a CMOS process strength estimator for analog circuits in this large system-on-chip. Measured integral nonlinearity is 0.7 least significant bits. The TDC consumes 5.3 mA raw and 1.3 mA with power management from a 1.3-V supply.

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