Herein, we report thin films’ characterizations and photovoltaic properties of an organic semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc is thermally deposited on quartz glass by using vacuum thermal evaporator at 1.5 × 10⁻⁶ mbar. Surface features of the ZnPc film are studied by using scanning electron microscope (SEM) with in situ energy dispersive x-ray spectroscopy (EDS) analysis and atomic force microscope (AFM) which reveal uniform film growth, grain sizes and shapes with slight random distribution of the grains. Ultraviolet-visible (UV-vis) and Fourier Transform Infrared (FTIR) spectroscopies are carried out of the ZnPc thin films to measure its optical bandgap (1.55 eV and 3.08 eV) as well as to study chemical composition and bond-dynamics. To explore photovoltaic properties of ZnPc, an Ag/ZnPc/PEDOT:PSS/ITO cell is fabricated by spin coating a 20 nm thick film of hole transport layer (HTL)—poly-(3,4-ethylenedioxythiophene) poly(styrene sulfonic acid) (PEDOT:PSS)—on indium tin oxide (ITO) substrate followed by thermal evaporation of a 100 nm layer of ZnPc and 50 nm silver (Ag) electrode. Current-voltage (I-V) properties of the fabricated device are measured in dark as well as under illumination at standard testing conditions (STC), i.e., 300 K, 100 mW/cm² and 1.5 AM global by using solar simulator. The key device parameters such as ideality factor (n), barrier height ( ${\varphi }_b$ ), junction/interfacial resistance (R_s) and forward current rectification of the device are measured in the dark which exhibit the formation of depletion region. The Ag/ZnPc/PEDOT:PSS/ITO device demonstrates good photovoltaic characteristics by offering 0.48 fill factor (FF) and 1.28 ± 0.05% power conversion efficiency (PCE), η.

This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT : PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current–voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.