Herein, we report thin films’ characterizations and photovoltaic properties of an organic semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc is thermally deposited on quartz glass by using vacuum thermal evaporator at 1.5 × 10⁻⁶ mbar. Surface features of the ZnPc film are studied by using scanning electron microscope (SEM) with in situ energy dispersive x-ray spectroscopy (EDS) analysis and atomic force microscope (AFM) which reveal uniform film growth, grain sizes and shapes with slight random distribution of the grains. Ultraviolet-visible (UV-vis) and Fourier Transform Infrared (FTIR) spectroscopies are carried out of the ZnPc thin films to measure its optical bandgap (1.55 eV and 3.08 eV) as well as to study chemical composition and bond-dynamics. To explore photovoltaic properties of ZnPc, an Ag/ZnPc/PEDOT:PSS/ITO cell is fabricated by spin coating a 20 nm thick film of hole transport layer (HTL)—poly-(3,4-ethylenedioxythiophene) poly(styrene sulfonic acid) (PEDOT:PSS)—on indium tin oxide (ITO) substrate followed by thermal evaporation of a 100 nm layer of ZnPc and 50 nm silver (Ag) electrode. Current-voltage (I-V) properties of the fabricated device are measured in dark as well as under illumination at standard testing conditions (STC), i.e., 300 K, 100 mW/cm² and 1.5 AM global by using solar simulator. The key device parameters such as ideality factor (n), barrier height ( ${\varphi }_b$ ), junction/interfacial resistance (R_s) and forward current rectification of the device are measured in the dark which exhibit the formation of depletion region. The Ag/ZnPc/PEDOT:PSS/ITO device demonstrates good photovoltaic characteristics by offering 0.48 fill factor (FF) and 1.28 ± 0.05% power conversion efficiency (PCE), η.

The appropriate combination of semiconducting polymer–inorganic nanocomposites can enhance the existing performance of polymers-only-based photovoltaic devices. Hence, polyaniline (PANI)/zinc oxide (ZnO) nanocomposites were prepared by combining ZnO nanoparticles with PANI in four distinct ratios to optimize their photovoltaic performance. Using a simple coating method, PANI, ZnO, and its nanocomposite, with varying weight percent (wt%) concentrations of ZnO nanoparticles, i.e., (1 wt%, 2 wt%, 3 wt%, and 4 wt%), were fabricated and utilized as an active layer to evaluate the potential for the high-power conversion efficiency of various concentrations, respectively. PANI/ZnO nanocomposites are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-vis) absorption, energy dispersive X-ray (EDX), and I-V measurement techniques. The XRD analysis showed a distinct, narrow peak, which corresponds to the wurtzite ZnO (101) plane. The SEM analysis verified the production of the PANI/ZnO composite by demonstrating that the crystalline ZnO was integrated into the PANI matrix. The elemental composition was determined by energy dispersive X-ray analysis (EDX), which confirmed the existence of PANI and ZnO without any impurities, respectively. Using Fourier transform infrared (FTIR) spectroscopy, various chemical bonds and stretching vibrations were analyzed and assigned to different peaks. The bandgap narrowing with an increasing PANI/ZnO composition led to exceptional optical improvement. The I-V characterization was utilized to investigate the impact of the nanocomposite on the electrical properties of the PANI/ZnO, and various concentrations of ZnO (1 wt%, 2 wt%, 3 wt%, and 4 wt%) in the PANI matrix were analyzed under both light and dark conditions at an STC of 1.5 AM globally. A high PCE of 4.48% was achieved for the PANI/ZnO (3 wt%), which revealed that the conductivity of the PANI/ZnO nanocomposite thin films improved with the increasing nanocomposite concentration.

In this paper, we report on the synthesis—via the wet chemical precipitation route method—and thin film characteristics of inorganic semiconductor, cuprous oxide (Cu₂O) nanoparticles, for their potential application in enhancing the humidity-sensing properties of semiconducting polymer poly(9,9-dioctylfluorene) (F8). For morphological analysis of the synthesized Cu₂O nanoparticles, transmission electron microscope (TEM) and scanning electron microscope (SEM) micrographs are studied to investigate the texture, distribution, shape, and sizes of Cu₂O crystallites. The TEM image of the Cu₂O nanoparticles exhibits somewhat non-uniform distribution with almost uniform shape and size having an average particle size of ≈24 ± 2 nm. Fourier transformed infrared (FTIR) and X-ray diffraction (XRD) spectra are studied to validate the formation of Cu₂O nanoparticles. Additionally, atomic force microscopy (AFM) is performed to analyze the surface morphology of polymer-inorganic (F8-Cu₂O) nanocomposites thin film to see the grain sizes, mosaics, and average surface roughness. In order to study the enhancement in sensing properties of F8, a hybrid organic–inorganic (F8-Cu₂O) surface-type humidity sensor Ag/F8-Cu₂O/Ag is fabricated by employing F8 polymer as an active matrix layer and Cu₂O nanoparticles as a dopant. The Ag/F8-Cu₂O/Ag device is prepared by spin coating a 10:1 wt% solution of F8-Cu₂O nanocomposite on pre-patterned silver (Ag) electrodes on glass. The inter-electrode gap (≈5 μm) between Ag is developed by photolithography. To study humidity sensing, the Ag/F8-Cu₂O/Ag device is characterized by measuring its capacitance (C) as a function of relative humidity (%RH) at two different frequencies (120 Hz and 1 kHz). The device exhibits a broad humidity sensing range (27–86%RH) with shorter response time and recovery time, i.e., 9 s and 8 s, respectively. The present results show significant enhancement in the humidity-sensing properties as compared to our previously reported results of Ag/F8/Ag sensor wherein the humidity sensing range was 45–78%RH with 15 s and 7 s response and recovery times, respectively. The improvement in the humidity-sensing properties is attributed to the potential use of Cu₂O nanoparticles, which change the hydrophobicity, surface to volume ratio of Cu₂O nanoparticles, as well as modification in electron polarizability and polarity of the F8 matrix layer.

This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I–V) measurements are carried out at 25 °C in dark conditions. The I–V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (µ), barrier height (ϕ_b), series resistance (R_s) and quality factor (n) are extracted from their corresponding I–V characteristics. Norde’s and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of R_s, n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.