Al–Mg–Si alloys are used in aircraft, train, and car manufacturing industries due to their advantages, which include non-corrosivity, low density, relatively low cost, high thermal and electrical conductivity, formability, and weldability. This study investigates the bulk mechanical properties of Al–Mg–Si alloys and the influence of the Si/Mg ratio on these properties. The Al cell was used as the starting structure, and then nine structures were modeled with varying percentages of aluminium, magnesium, and silicon. Elastic constant calculations were conducted using the stress–strain method as implemented in the quantum espresso code. This study found that the optimum properties obtained were a density of 2.762 g/cm³, a bulk modulus of 83.3 GPa, a shear modulus of 34.4 GPa, a Vickers hardness of 2.79 GPa, a Poisson’s ratio of 0.413, a Pugh’s ratio of 5.42, and a yield strength of 8.38 GPa. The optimum Si/Mg ratio was found to be 4.5 for most of the mechanical properties. The study successfully established that the Si/Mg ratio is a critical factor when dealing with the mechanical properties of the Al–Mg–Si alloys. The alloys with the optimum Si/Mg ratio can be used for industrial applications such as plane skins and mining equipment where these properties are required.

Pd-F:SnO₂ thin films have been prepared by spray pyrolysis technique. Optimization has been done by doping SnO₂ with palladium at varying levels of concentration and then recording sheet resistance. The sheet resistivity has been observed to decrease gradually as at% Pd concentration is increased; an optimum sheet resistivity value of 2.71 × 10⁻² Ω cm has been recorded. The decrease in sheet resistivity has been attributed to presence of Pd ions which contribute in increment of charge carrier density. Using the optimum value of at% Pd doping, the same procedure has been repeated to study the effect of fluorine on Pd:SnO₂; an optimum value of 1.64 × 10⁻⁴ Ω cm sheet resistivity has been recorded. This decrease has been attributed to substitution of O⁻ with those of fluorine hence improving charge carrier density. The effect of passivation has been studied by comparing as prepared, annealed and passivated Pd-F:SnO₂ thin films. Annealing has been observed to decrease the sheet resistivity to 1.21 × 10⁻⁴ Ω cm, while passivation has the effect of increasing the sheet resistivity to 1.53 × 10⁻⁴ Ω cm which is attributed to effects resulting from annealing the samples in nitrogen gas atmosphere.

Studies have shown that perovskites have a high potential of outdoing silicon based solar cells in terms of solar energy conversion, but their rate of degradation is also high. This study reports on improvement on the stability of CH₃NH₃PbI₃ by passivating it with polymethylmethacrylate (PMMA). Structural and electronic properties of CH₃NH₃PbI₃ stabilized by polymethylmethacrylate (PMMA) were investigated by varying concentrations of PMMA in the polymer solutions. Stability tests were performed over a period of time using modulated surface photovoltage (SPV) spectroscopy, X-ray diffraction (XRD), and photoluminescence (PL) measurements. The XRD patterns confirm the tetragonal structure of the deposited CH₃NH₃PbI₃ for every concentration of PMMA. Furthermore, CH₃NH₃PbI₃ coated with 40 mg/mL of PMMA did not show any impurity phase even after storage in air for 43 days. The Tauc gap (E_Tauc) determined on the basis of the in-phase SPV spectra was found in the range from 1.585 to 1.62 eV for the samples stored during initial days, but shifted towards lower energies as the storage time increased. This can be proposed to be due to different chemical reactions between CH₃NH₃PbI₃/PMMA interfaces and air. PL intensity increased with increasing concentration of PMMA except for the perovskite coated with 40 mg/mL of PMMA. PL quenching in the perovskite coated with 40 mg/mL of PMMA can be interpreted as fast electron transfer towards the substrate in the sample. This study shows that, with an optimum concentration of PMMA coating on CH₃NH₃PbI₃, the lifetime and hence stability on electrical and structural behavior of CH₃NH₃PbI₃ is improved.

In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C. Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.