The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Ultraviolet-Visible Spectroscopy (UV–Vis–NIR). The silicon dissolution rate was found to be directly proportional to the illumination intensity and inversely proportional to the wafer resistivity. High light intensity during etching treatment led to increased total current on the Si surface. It was shown that porous silicon of different thicknesses, pore diameters, and porosities can be effectively fabricated by photo-assisted etching on a Si surface without external bias or metals.

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

This study is devoted to the confinement effects on freezing and melting in electrochemical systems containing nanomaterial electrodes and liquid electrolytes. The melting of nanoparticles formed upon freezing of liquids confined in pores of disordered nanostructured n-type silicon has been studied by low-temperature differential scanning calorimetry. Experimental results obtained for deionized water, an aqueous solution of potassium sulfate, and n-decane are presented. A model is proposed for predicting the melting point of nanoparticles formed during freezing of liquids inside the pores of a disordered nanostructured material. The model is based on the classical thermodynamic concept of the phase transition temperature dependence on the particle size. It takes into account the issues arising when a liquid is dispersed in a matrix of another material: the effect of mechanical stress resulted from the difference in the thermal linear expansion coefficients at a temperature gradient, the effect of the volumetric liquid content in the matrix, the presence of a nonfreezing liquid layer inside the pores, and the effect of wettability of the matrix with the liquid. Model calculations for water and n-decane confined in nanostructured silicon matrix have been carried out considering the volumetric liquid content. The results obtained have been compared with the differential scanning calorimetry data.

The process of the porous silicon layer formation by metal-assisted etching of single-crystal Si with the resistivity of ρ = 0.01 Ω cm, coated with thin Pd-film up to 100 nm thick, in HF/H₂O₂/H₂O solution is studied. The porous silicon is studied by scanning electron microscopy and gravimetric analysis. The dependence of the silicon dissolution rate on the HF concentration, in the presence and in the absence of the Pd-film, is investigated. The anodic current facilitating the Si dissolution in the HF solutions of different concentration is studied. By using sessile drop method, the porous silicon formed by the Pd-assisted anodic etching was shown to be superhydrophobic. The porous Si wetting angle reached 172°. The free surface energy for the porous layers and the water surface tension at the porous Si are calculated. The modified Si-surfaces may found their possible use in robotics.

The formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity ρ = 0.01 Ω·cm at 25 °C, 50 °C and 75 °C in HF/H₂O₂/H₂O solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis. It is shown that por-Si, formed by Pd nanoparticles-assisted chemical etching, has the property of ethanol electrooxidation. The chromatographic analysis of ethanol electrooxidation products on por-Si/Pd shows that the main products are CO₂, CH₄, H₂, CO, O₂, acetaldehyde (CHO)⁺, methanol and water vapor. The mass activity of the por-Si/Pd system was investigated by measuring the short-circuit current in ethanol solutions. The influence of the thickness of porous silicon and wafer on the mass activity and the charge measured during ethanol electrooxidation was established. Additionally, the mechanism of charge transport during ethanol electrooxidation was established.

The present study investigates the photocatalytic properties of hydrothermally synthesized TiO₂ nanowires (NWs) for CO₂ reduction in H₂O vapor. It has been demonstrated that TiO₂ NWs, thermally treated at 500–700 °C, demonstrate an almost tenfold higher yield of products compared to the known commercial powder TiO₂ P25. It has been found that the best material is a combination of anatase, TiO₂-B and rutile. The product yield increases with increasing heat treatment temperature of TiO₂ NWs. This is associated with an increase in the degree of crystallinity of the material. It is shown that the best product yield of the CO₂ reduction in H₂O vapor is achieved when the TiO₂ NW photocatalyst is heated to 100 °C.