The delafossite structured CuCrO2 system is well known as p-type transparent conducting oxide. We have synthesized a Cu deficient form at low process temperature maintaining its good conductive properties.
Epitaxial -type transparent conducting oxide (TCO) was grown by electron-beam evaporation in a molecular beam epitaxy system on -plane sapphire. The influence of Mg dopants and the oxygen partial pressure were investigated by thermoelectric and electrical measurements. The conduction mechanism is analyzed using the small-polaron hopping model, and hopping activation energies have been determined, which vary with doping concentration in the range of 210–300 ± 5 meV. Films with better conductivity were obtained by postannealing. The effect of postannealing is discussed in terms of a crystallographic reordering of the Mg dopant. The highest Seebeck mobilities obtained from thermoelectric measurements are of the order of . We investigate the fundamental properties of a Mg dopant in a high crystalline quality epitaxial film of a binary oxide, helping us understand the role of short range crystallographic order in a -type TCO in detail.
Screening for potential new materials with experimental and theoretical methods has led to the discovery of many promising candidate materials for p-type transparent conducting oxides. It is difficult to reliably assess a good p-type transparent conducting oxide (TCO) from limited information available at an early experimental stage. In this paper we discuss the influence of sample thickness on simple transmission measurements and how the sample thickness can skew the commonly used figure of merit of TCOs and their estimated band gap. We discuss this using copper-deficient CuCrO as an example, as it was already shown to be a good p-type TCO grown at low temperatures. We outline a modified figure of merit reducing thickness-dependent errors, as well as how modern ab initio screening methods can be used to augment experimental methods to assess new materials for potential applications as p-type TCOs, p-channel transparent thin film transistors, and selective contacts in solar cells.
The synthesis of a family of chiral and enantiomerically pure pyridyl‐diamide (pda) ligands that upon complexation with europium [Eu(CF3SO3)3] result in chiral complexes with metal centered luminescence is reported; the sets of enantiomers giving rise to both circular dichroism (CD) and circularly polarized luminescence (CPL) signatures. The solid‐state structures of these chiral metallosupramolecular systems are determined using X‐ray diffraction showing that the ligand chirality is transferred from solution to the solid state. This optically favorable helical packing arrangement is confirmed by recording the CPL spectra from the crystalline assembly by using steady state and enantioselective differential chiral contrast (EDCC) CPL Laser Scanning Confocal Microscopy (CPL‐LSCM) where the two enantiomers can be clearly distinguished.