In this paper, a dielectric resonator antenna (DRA) with high gain and wide impedance bandwidth for fifth-generation (5G) wireless communication applications is proposed. The dielectric resonator antenna is designed to operate at higher-order mode to achieve high antenna gain, while a hollow cylinder at the center of the DRA is introduced to improve bandwidth by reducing the quality factor. The DRA is excited by a microstrip line with a narrow aperture slot. The reflection coefficient, antenna gain, and radiation pattern of the proposed DRAs are analyzed using the commercially available full-wave electromagnetic simulation tool CST Microwave Studio (CST MWS). In order to verify the simulation results, the proposed antenna structures were fabricated and experimentally validated. Measured results of the fabricated prototypes show a 10-dB return loss impedance bandwidth of 10.7% (14.3–15.9GHz) and 16.1% (14.1–16.5 GHz) for DRA1 and DRA2, respectively, at the operating frequency of 15 GHz. The results show that the designed antenna structure can be used in the Internet of things (IoT) for device-to-device (D2D) communication in 5G systems.
A novel method of feeding a dielectric resonator using a metallic circular patch antenna at millimeter wave frequency band is proposed here. A ceramic material based rectangular dielectric resonator antenna with permittivity 10 is placed over a rogers RT-Duroid based substrate with permittivity 2.2 and fed by a metallic circular patch via a cross slot aperture on the ground plane. The evolution study and analysis has been done using a rectangular slot and a cross slot aperture. The cross-slot aperture has enhanced the gain of the single element non-metallic dielectric resonator antenna from 6.38 dB from 8.04 dB. The Dielectric Resonator antenna (DRA) which is designed here has achieved gain of 8.04 dB with bandwidth 1.12 GHz (24.82–25.94 GHz) and radiation efficiency of 96% centered at 26 GHz as resonating frequency. The cross-slot which is done on the ground plane enhances the coupling to the Dielectric Resonator Antenna and achieves maximum power radiation along the broadside direction. The slot dimensions are further optimized to achieve the desired impedance match and is also compared with that of a single rectangular slot. The designed antenna can be used for the higher frequency bands of 5G from 24.25 GHz to 27.5 GHz. The mode excited here is characteristics mode of TE1Y1. The antenna designed here can be used for indoor small cell applications at millimeter wave frequency band of 5G. High gain and high efficiency make the DRA designed here more suitable for 5G indoor small cells. The results of return loss, input impedance match, gain, radiation pattern, and efficiency are shown in this paper.
1 October 2019 in TELKOMNIKA (Telecommunication Computing Electronics and Control)
A triple-band substrate integrated waveguide (SIW) with dielectric resonator antenna (DRA) for fourth-generation (4G) and fifth-generation (5G) applications is proposed and analyzed in this paper. Loading SIW with DRA allows for a wide bandwidth, low losses, and fabrication ease. The proposed antenna can transmit and receive data independently by covering LTE Band 3 at 1.8 GHz, LTE Band 8 at 2.6 GHz, and 5G n77 at 3.7 GHz. A U-shaped cut is applied to achieve the targeted multi-resonance frequencies. The antenna obtains high bandwidths of up to 19.50% with 4.9 dBi gain and 81.0% efficiency at 1.8 GHz, 6.58% bandwidth with 4.4 dBi and 72.7% efficiency at 2.6 GHz, and 8.21% bandwidth with 6.7 dBi and 73.5% efficiency at 3.7 GHz. The simulated and measured results agree well. The proposed antenna is feasible for 4G and 5G applications.
A Rectangular Dielectric Resonator (DRA) has been designed and investigated at 26 GHz of frequency using different feeding techniques. The Probe feed method has achieved a Percentage bandwidth of 14.73. An aperture coupled DRA and stripline fed DRA also have achieved wideband, which can be used for 5G Wireless Applications. The microstrip fed DRA have achieved the highest gain value of 7.10 dBi. The design parameters of the dielectric resonator are also optimized and are shown in this paper. The performance of the DRA has been analyzed by using parameters as return loss, impedance match, bandwidth and gain for three different feeding techniques.
1 September 2019 in Bulletin of Electrical Engineering and Informatics
In this paper, wideband high gain dielectric resonator antenna for 5G applications is presented. Higher order mode is exploited to enhance the antenna gain, while the array of symmetrical cylindrical shaped holes drilled in the DRA to improves the bandwidth by reducing the quality factor. The proposed DRA is designed using dielectric material with relative permittivity of 10 and loss tangent of 0. 002.The Rogers RT/Droid 5880 has been selected as substrate with relative permittivity of 2.2, loss tangent of 0.0009- and 0.254-mm thickness. The simulated results show that, the proposed geometry has achieved a wide impedance bandwidth of 17.3% (23.8-28.3GHz=4.5 GHz) for S11-10 dB, and a maximum gain of about 9.3 dBi with radiation efficiency of 96% at design frequency of 26 GHz. The DRA is feed by microstrip transmission line with slot aperture. The reflection coefficient, the radiation pattern, and the antenna gain are studied by full-wave EM simulator CST Microwave Studio. The proposed antenna can be used for the 5G communication applications such as device to device communication (D2D).