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<mml:math display="inline"><mml:mrow><mml:mo>[</mml:mo><mml:mi mathvariant="normal">Ni</mml:mi><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mi>dmamb</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mo>]</mml:mo></mml:mrow></mml:math>[Ni(dmamb)2] as a precursor and <mml:math display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:msub><mml:mi mathvariant="normal">H</mml:mi><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and <mml:math display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, <mml:math display="inline"><mml:mrow><mml:mi mathvariant="normal">Ni</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow></mml:math>Ni∕Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with <mml:math display="inline"><mml:mrow><mml:mn>3</mml:mn><mml:mspace width="0.3em"></mml:mspace><mml:mi>μ</mml:mi><mml:mi mathvariant="normal">m</mml:mi></mml:mrow></mml:math>3μm width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition.No biography provided yet