In this study, we aimed to improve our understanding of the response mechanisms associated with the formation of CdS thin films. CdS thin film remains the most valuable option for many researchers, since it has shown to be an effective buffer material for film-based polycrystalline solar cells (CdTe, CIGSe, CZTS). We performed experimental and numerical simulations to investigate the effect of different thiourea concentrations on the characteristics of the CdS buffer layer. The experimental results reveal that an increase in thiourea concentrations had a direct effect on the optical results, with bandgap values ranging from (2.32 to 2.43) eV. XRD analysis confirmed that all deposited films were polycrystalline, except for [1/0.75], where there is no CdS formation. Electrical studies indicated that CdS with a molar ratio of [Cd]/[S] of 1 had the maximum carrier concentration (3.21 × 10¹⁴ cm⁻³) and lowest resistivity (1843.9 Ω·cm). Based on the proposed mechanism, three kinds of mechanisms are involved in the formation of CdS layers. Among them, the ion-by-ion mechanism has a significant effect on the formation of CdS films. Besides, modelling studies reveal that the optic-electrical properties of the buffer layer play a crucial role in influencing the performance of a CIGS solar cell.

Antimony trisulfide (Sb₂Se₃), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb₂Se₃ solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb₂Se₃ layer’s thickness, defect density, band gap, energy level, and carrier concentration on the devices’ performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb₂Se₃ layer: an 800 optimal thickness for the Sb₂Se₃ absorber; less than 10¹⁵ cm⁻³ for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 10¹⁴ cm⁻³ carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb₂Se₃ solar cells.

The aim of this study is to acquire a deeper understanding of the response mechanism that is associated with the formation of CdS thin films. We presented an effective and new hybrid sensitisation technique, which involved the 1-step linker between the related chemical bath deposition (CBD) process and the traditional doping method during CBD for synthesising high-quality, CdS thin films. The mechanism for the combined synthesis of the films is also describes. CdS films were electrostatically bonded to soda-lime glass, causing the formation of the intermediate complexes [Cd(NH₃)₄]²⁺, which aided in the collision of these complexes with a soda-lime glass slide. In the one-step fabrication technique, 3-Mercaptopropionic Acid (MPA) was employed as a second source of sulphur ions and a linker molecule. Optical studies showed that the bandgap ranged between (2.26–2.52) eV. CdS + MPA films exhibited a uniform distribution of spherical molecules based on their morphological properties. After annealing, this approach significantly altered the electrical characteristics of CdS films. The CdS + MPA films displayed the highest carrier concentration whereas the CdS + Ag + MPA films exhibited the lowest resistivity, with a jump of 3 orders of magnitude.

Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers' electrical characteristics on the performance of CIGS thin film photovoltaic devices, particularly, carrier concentration and the quantum effect. As well Ag₂S buffer layer has been experimentally examined to fulfilment its effect in term of bulk and quantum bandgap. Experimental results depicted that, Ag₂S QDs has polycrystalline nature of films, with smooth surface roughness, and average diameter 4 nm. Meanwhile, a simulation revealed that the Fermi level of the (n-buffer layer) material shifts closer to the conduction band with an increase in carrier concentration. The findings indicate that, a buffer layer with a wider bandgap and carrier concentration is an essential demand for achieving a device with a higher conversion efficiency and a broader bandgap-CBO window. It was attributed to beneficial synergistic effects of high carrier concentration and narrower depletion region, which enable carriers to overcome high CBO barrier. Most importantly, modelling results indicate that the optic-electrical characteristics of the buffer layer are critical in determining the progress of a CIGS solar cell.