An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

In this study, a simulation‐based analysis of environmentally friendly, lead‐free perovskite (PVK) solar cells (PSC) with high power conversion efficiency (PCE), is presented. Various PVK materials, including lead‐, tin‐, germanium‐, and tin–germanium‐based compounds, are evaluated through simulations to explore their impact on device performance. Among these, CsSn_0.5Ge_0.5I₃ demonstrates the highest simulated efficiency, with a rectangular cell architecture of 0.45 × 0.9 mm. Key parameters such as thickness, temperature, doping concentration, and bandgap are systematically varied in the simulations to study their effects on device performance. The optimized architecture is found to be Au/Spiro‐MeOTAD (hole‐transport layer)/CsSn_0.5Ge_0.5I₃/TiO₂ (electron‐transport layer)/FTO, achieving a simulated PCE of 21.61%, with an open‐circuit voltage (V_oc) of 1.2 V, short‐circuit current density (J_sc) of 21.32 mA cm⁻², and fill factor of 84.43%. Furthermore, in this study, detailed electrical simulations (electric field distribution, Shockley–Read–Hall recombination, and electron and hole concentrations) and thermal simulations (nonradiative recombination heating, joule heating) of the device are included. In this work, the potential of lead‐free PSCs is underscored and the importance of continuous simulation studies to design eco‐friendly, high‐efficiency photovoltaic devices is highlighted.

This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I- V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.