Quantum dot solar cells have received significant attention in comparison to standard solar cells because of their hybrid nature, low production costs, and higher power conversion efficiency. Although quantum dot solar cells (QDSCs) have several benefits over ordinary solar cells, their performance lags due to carrier combination within the quasi-neutral region (QNR). The electron transport layer (ETL) and hole transport layer (HTL) are the two layers that have the most effect on QDSC performance. This numerical analysis is carried out by using the Solar Cell Capacitance Simulator-1 dimensional software (SCAPS-1D). In this paper, the optimization of two different device structure investigations is performed. In this proposed device structure, WS₂ and IGZO are used as two ETL, CdS is used as a buffer layer, Sb₂Se₃ is used as an absorber layer, and PbS as HTL. Initially, the optimization of the device has been performed, followed by depth analysis of the doping densities. Resistance analysis is also performed to illustrate the effect of resistance on the device. Further, the impact of temperature on the device parameters is also represented, followed by a contour plot between thickness and bandgap for both devices. The impact of the series and shunt resistance on the performance of the solar cell is investigated. The effect of temperature is studied further, and it is observed that the solar device is temperature-sensitive. Finally, the optimized performance with IGZO ETL with PCE of 20.94% is achieved.