In the present paper, the theoretical investigation of the device structure ITO/CeO₂/SnS/Spiro-OMeTAD/Mo of SnS-based solar cell has been performed. The aim of this work is to examine how the Spiro-OMeTAD HTL affects the performance of SnS-based heterostructure solar cell. Using SCAPS-1D simulation software, various parameters of SnS-based solar cell such as work function, series and shunt resistance and working temperature have been investigated. With the help of Spiro-OMeTAD, the suggested cell’s open-circuit voltage was increased to 344 mV. The use of Spiro-OMeTAD HTL in the SnS-based solar cell resulted in 14% efficiency increase, and the proposed heterojunction solar cell has 25.65% efficiency. The cell’s performance is determined by the carrier density and width of the CeO₂ ETL (electron transport layer), SnS absorber layer and Spiro-OMeTAD HTL (hole transport layer). These data reveal that the Spiro-OMeTAD solar cells could have been a good HTL (hole transport layer) in regards to producing SnS-based heterojunction solar cell with high efficiency and reduced cost.

Research on photovoltaic solar cells has always been exciting due to its clean and green nature. However, the quest for alternative approaches to the design of highly efficient solar cells with optimal cost-efficiency ratios has also been progressing. CuSbS₂-based ternary compound semiconductor is a promising candidate for the ultrathin film photovoltaic cell due to the high absorption coefficient, low cost, and earth abundant which makes it suitable to use as a thin-film absorber layer. The impact of various parameters such as thickness, bandgap, band alignment, temperature, carrier concentration, and bandgap grading has been studied to optimize the overall performance of the solar device. In present work, we have adopted the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulation approach to the design of CuSbS₂ absorber-based solar heterostructure cells to boost the electrical properties of the solar cell.

Solar cells based on lead-free perovskite have demonstrated great potential for next-generation renewable energy. The SCAPS-1D simulation software was used in this study to perform novel device modelling of a lead-free perovskite solar cell of the architecture ITO/WS₂/CH₃NH₃SnI₃/P3HT/Au. For the performance evaluation, an optimization process of the different parameters such as thickness, bandgap, doping concentration, etc., was conducted. Extensive optimization of the thickness and doping density of the absorber and electron transport layer resulted in a maximum power-conversion efficiency of 33.46% for our designed solar cell. Because of the short diffusion length and higher defect density in thicker perovskite, an absorber thickness of 1.2 µm is recommended for optimal solar cell performance. Therefore, we expect that our findings will pave the way for the development of lead-free and highly effective perovskite solar cells.

Quantum dot solar cells have received significant attention in comparison to standard solar cells because of their hybrid nature, low production costs, and higher power conversion efficiency. Although quantum dot solar cells (QDSCs) have several benefits over ordinary solar cells, their performance lags due to carrier combination within the quasi-neutral region (QNR). The electron transport layer (ETL) and hole transport layer (HTL) are the two layers that have the most effect on QDSC performance. This numerical analysis is carried out by using the Solar Cell Capacitance Simulator-1 dimensional software (SCAPS-1D). In this paper, the optimization of two different device structure investigations is performed. In this proposed device structure, WS₂ and IGZO are used as two ETL, CdS is used as a buffer layer, Sb₂Se₃ is used as an absorber layer, and PbS as HTL. Initially, the optimization of the device has been performed, followed by depth analysis of the doping densities. Resistance analysis is also performed to illustrate the effect of resistance on the device. Further, the impact of temperature on the device parameters is also represented, followed by a contour plot between thickness and bandgap for both devices. The impact of the series and shunt resistance on the performance of the solar cell is investigated. The effect of temperature is studied further, and it is observed that the solar device is temperature-sensitive. Finally, the optimized performance with IGZO ETL with PCE of 20.94% is achieved.

This paper describes the simulation by Solar Cell Capacitance Simulator-1D (SCAPS-1D) software of ZnO/CdS/SnS/NiO/Au solar cells, in which zinc oxide (ZnO) is used as transparent conductive oxide (TCO) and nickel oxide (NiO) is used as a hole transport layer (HTL). The effects of absorber layer (SnS) thickness, carrier concentration, SnS defect density, NiO HTL, ZnO TCO, electron affinity and work function on cell performance have been evaluated. The effect of interface defect density of SnS/CdS on the performance of the heterojunction solar cell is also analysed. As the results indicate, a maximum power conversion efficiency of 26.92% was obtained.