With the rapid development of flexible electronic devices (especially flexible LCD/OLED), flexible transparent electrodes (FTEs) with high light transmittance, high electrical conductivity, and excellent stretchability have attracted extensive attention from researchers and businesses. FTEs serve as an important part of display devices (touch screen and display), energy storage devices (solar cells and super capacitors), and wearable medical devices (electronic skin). In this paper, we review the recent progress in the field of FTEs, with special emphasis on metal materials, carbon-based materials, conductive polymers (CPs), and composite materials, which are good alternatives to the traditional commercial transparent electrode (i.e., indium tin oxide, ITO). With respect to production methods, this article provides a detailed discussion on the performance differences and practical applications of different materials. Furthermore, major challenges and future developments of FTEs are also discussed.

Micro-LED display technology is considered to be the next generation of display technology, which has the characteristics of high miniaturization, thin film and integration, as well as the advantages of high brightness, high contrast, fast response speed and long service life. However, in the development of Micro-LED display technology, there are still some technical and cost problems to be solved. This paper focuses on the key technologies involved in Micro-LED display technology, such as chip technology, mass transfer, full-color display, bonding and driving technology, the research history and frontier progress of these technologies are reviewed in detail. For chip epitaxy technology, the wavelength uniformity, current density and defect control are emphasized; for chip process, the two main chip structures and the challenges brought by miniaturization are discussed emphatically; for chip integration, full-color display, backplane bonding and driving, several mainstream technical schemes are summarized in turn. Finally, the chip detection and repair technologies and commercial application are introduced.

In view of the low sensitivity, high operating temperature and poor selectivity of acetone measurements, in this paper much effort has been paid to improve the performance of acetone sensors from three aspects: increasing the surface area of the material, improving the surface activity and enhancing gas diffusion. A hierarchical flower-like Pt-doped (1 wt %) 3D porous SnO₂ (3DPS) material was synthesized by a one-step hydrothermal method. The micropores of the material were constructed by subsequent annealing. The results of the experiments show that the 3DPS-based sensor's response is strongly dependent on temperature, exhibiting a mountain-like response curve. The maximum sensor sensitivity (R_a/R_g) was found to be as high as 505.7 at a heating temperature of 153 °C and with an exposure to 100 ppm acetone. Additionally, at 153 °C, the sensor still had a response of 2.1 when exposed to 50 ppb acetone gas. The 3DPS-based sensor also has an excellent selectivity for acetone detection. The high sensitivity can be explained by the increase in the specific surface area brought about by the hierarchical flower-like structure, the enhanced surface activity of the noble metal nanoparticles, and the rapid diffusion of free-gas and adsorbed gas molecules caused by the multiple channels of the microporous structure.

Detecting xylene gas is an important means of avoiding human harm from gas poisoning. A precise measurement demands that the gas sensor used must have high sensitivity, high selectivity, and low working temperature. To meet these requirements, in this study, Sn²⁺-doped NiO flower-like microspheres (SNM) with different amounts of Sn²⁺ synthesized by a one-step hydrothermal process were investigated. The responses of gas sensors based on different Sn²⁺-doped NiO materials for various targeting gases were fully characterized. It was found that all of the synthesized materials exhibited the best gas response at a working temperature of 180 degrees, which was much lower than the previously reported working temperature range of 300–500 degrees. When exposed to 10 ppm xylene, the 8 at% Sn²⁺-doped NiO sensor (mol ratio) exhibited the highest response, with a value of 30 (R_g/R_a). More significantly, the detection limit of the 8 at% Sn²⁺-doped NiO sensor for xylene is down in the ppb level. The Sn²⁺-doped NiO material also exhibits excellent selectivity for other gases with long-term stability and repeatability. The significant improvement in the response to xylene can theoretically be attributed to a decrease in the intrinsic hole carrier concentration, higher amounts of adsorbed oxygen and active sites.

Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous silicon (a-Si) technology, low-temperature polycrystalline silicon (LTPS) technology, metal oxide (MO) technology, and low-temperature polycrystalline silicon and oxide (LTPO) technology. In this review, we outline the fundamental display principles and four major TFT technologies, covering conventional single-gated TFTs to novel two-gated TFTs. We focus on novel pixel circuits for three glass-based display technologies with additional mention of pixel circuits for silicon-based OLED and silicon-based micro-LED.