A graphene oxide-coated in-fiber Mach-Zehnder interferometer (MZI) formed with a multimode fiber-thin core fiber-multimode fiber (MMF-TCF-MMF) is proposed and experimentally demonstrated for ammonia gas (NH₃) sensing. The MZI structure is composed of two segments of MMF of length 2 mm, with a flame-tapered TCF between them as the sensing arm. The MMFs act as mode couplers to split and recombine light owing to the core diameter mismatch with the other fibers. A tapered TCF is formed by the flame melting taper method, resulting in evanescent wave leakage. A layer of graphene oxide (GO) is applied to the tapered region of the TCF to achieve gas adsorption. The sensor operates on the principle of changing the effective refractive index of the cladding mode of a fiber through changing the conductivity of the GO coating by adsorbed NH₃ molecules, which gives rise to a phase shift and shows as the resonant dip shifts in the transmission spectrum. So the concentration of the ammonia gas can be obtained by measuring the dip shift. A wavelength-shift sensitivity of 4.97 pm/ppm with a linear fit coefficient of 98.9% is achieved for ammonia gas concentrations in the range of 0 to 151 ppm. In addition, we performed a repetitive dynamic response test on the sensor by charging/releasing NH₃ at concentration of 200 ppm and a relative humidity test in a relative humidity range of 35% to 70%, which demonstrates the reusability and stability of the sensor.

In this paper, we look at the work of a classical plasmon-induced transparency (PIT) based on metasurface, including a periodic lattice with a cut wire (CW) and a pair of symmetry split ring resonators (SSR). Destructive interference of the ‘bright-dark’ mode originated from the CW and a pair of SSRs and resulted in a pronounced transparency peak at 1.148 THz, with 85% spectral contrast ratio. In the simulation, the effects of the relative distance between the CW and the SSR pair resonator, as well as the vertical distance of the split gap, on the coupling strength of the PIT effect, have been investigated. Furthermore, we introduce a continuous graphene strip monolayer into the metamaterial and by manipulating the Fermi level of the graphene we see a complete modulation of the amplitude and line shape of the PIT transparency peak. The near-field couplings in the relative mode resonators are quantitatively understood by coupled harmonic oscillator model, which indicates that the modulation of the PIT effect result from the variation of the damping rate in the dark mode. The transmitted electric field distributions with polarization vector clearly confirmed this conclusion. Finally, a group delay $t_g$ of 5.4 ps within the transparency window is achieved. We believe that this design has practical applications in terahertz (THz) functional devices and slow light devices.

A broadband terahertz (THz) absorber, based on a graphene metasurface, which consists of a layer of ring-porous patterned structure array and a metallic mirror separated by an ultrathin SiO₂ dielectric layer, is proposed and studied by numerical simulation. The simulated results show that the absorptivity of the absorber reaches 90% in the range of 0.91–1.86 THz, and the normalized bandwidth of the absorptivity is 68.6% under normal incidence. In the simulation, the effects of the geometric parameters of the structure on the absorption band have been investigated. The results show that the absorber is insensitive to the incident polarization angle for both transverse electric (TE) and transverse magnetic (TM) under normal incidence. In addition, the absorber is not sensitive to oblique incidence of the light source under TE polarization conditions, and has an approximately stable absorption bandwidth at the incident angle from 0° to 50°. The absorption band can be adjusted by changing the bias voltage of the graphene Fermi level without varying the nanostructure. Furthermore, we propose that a two-layer graphene structure with the same geometric parameters is separated by a dielectric layer of appropriate thickness. The simulated results show that the absorptivity of the two-layer absorber reaches 90% in the range of 0.83-2.04 THz and the normalized bandwidth of the absorptivity is 84.3% under normal incidence. Because of its excellent characteristics based on graphene metamaterial absorbers, it has an important application value in the field of subwavelength photonic devices.

A Mach-Zehnder interferometer for measurement of temperature is proposed and experimentally demonstrated, which consists of two sections of single mode fiber (SMF) and a section of thin core fiber spliced between the two SMFs. The two welding areas are heated and stretched to improve the split and recombination of light. The wavelength of the resonant dip will shift when temperature varies due to the thermo-optic and thermal expansion effect. The experimental results show that a temperature sensitivity of 65 pm/°C with a linear correlation coefficient of 0.996 can be achieved in a temperature range from 25 °C to 80 °C. Due to its ease of manufacture, low cost, and high sensitivity, the fiber optic temperature sensor is suitable for temperature measurement applications.

A novel humidity sensor based on core-offset fiber Mach-Zehnder interferometer (MZI) coated with graphene oxide has been carried out. The MZI consists of three single mode fibers, which are spliced by the core-offset. The sensing head is a core-offset fiber with a length of 35 mm and a 5 m core-offset, which is coated with the graphene oxide. The intensity and wavelength of the resonant dip of the MZI will vary when the ambient humidity changes. The experimental results show that the sensitivity of 0.104 dB/%RH and 0.0272 nm/%RH with a linear correlation coefficient of 99.61% and 99.21% in the relative humidity from 30% to 60% could be obtained. Its low manufacturing cost and high stability will be their absolute advantages of future applications in agricultural production, storage and other fields.

Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous silicon (a-Si) technology, low-temperature polycrystalline silicon (LTPS) technology, metal oxide (MO) technology, and low-temperature polycrystalline silicon and oxide (LTPO) technology. In this review, we outline the fundamental display principles and four major TFT technologies, covering conventional single-gated TFTs to novel two-gated TFTs. We focus on novel pixel circuits for three glass-based display technologies with additional mention of pixel circuits for silicon-based OLED and silicon-based micro-LED.