A sensitive volatile organic vapor sensor based on the LSPR properties of silver triangular nanoprisms is proposed in this paper. The triangular nanoprisms were fabricated by a nanosphere lithography (NSL) method. They have sharp vertices and edges, and are arranged in an ideal hexangular array. These characteristics ensure that they exhibit an excellent LSPR spectrum and a high sensitivity to the exterior environment changes. The LSPR spectra responding to ethanol vapor and four other volatile organic vapors—acetone, benzene, hexane and propanol—were measured with a UV-vis spectrometer in real time. Compared with the other four vapors, ethanol exhibits the highest sensitivity (~0.1 nm/mg L⁻¹) and the lowest detection limit (~10 mg/L) in the spectral tests. The ethanol vapor test process is also fast (~4 s) and reversible. These insights demonstrate that the triangular nanoprism based nano-sensor can be used in ethanol vapor detection applications.

Microelectromechanical System (MEMS)-based scanning mirrors are important optical devices that have been employed in many fields as a low-cost and miniaturized solution. In recent years, the rapid development of Light Detection and Ranging (LiDAR) has led to opportunities and challenges for MEMS scanners. In this work, we propose a 2D electrostatically actuated micro raster scanner with relatively large aperture. The 2D scanner combines a resonant scanning axis driven by an in-plane comb and a quasistatic scanning axis driven by a vertical comb, which is achieved by raising the moving comb finger above the fixed comb finger through the residual stress gradient. The analytic formula for the resonant axis frequency, based on the mechanical coupling of two oscillation modes, is derived and compared with finite element simulation. A prototype is designed, fabricated, and tested, and an overall optical Field-of-View (FoV) of about 60° × 4° is achieved. Finally, some possibilities for further improvement or optimization are discussed.

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm⁻¹ and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.