We present an improved atomic force microscopy (AFM) method to study the piezoelectric properties of nanostructures. An AFM tip is used to deform a free-standing piezoelectric nanowire. The deflection of the nanowire induces an electric potential via the piezoelectric effect, which is measured by the AFM coating tip. During the manipulation, the applied force, the forcing location and the nanowire's deflection are precisely known and under strict control. We show the measurements carried out on intrinsic GaN and n-doped GaN-AlN-GaN nanowires by using our method. The measured electric potential, as high as 200 mV for n-doped GaN-AlN-GaN nanowire and 150 mV for intrinsic GaN nanowire, have been obtained, these values are higher than theoretical calculations. Our investigation method is exceptionally useful to thoroughly examine and completely understand the piezoelectric phenomena of nanostructures. Our experimental observations intuitively reveal the great potential of piezoelectric nanostructures for converting mechanical energy into electricity. The piezoelectric properties of nanostructures, which are demonstrated in detail in this paper, represent a promising approach to fabricating cost-effective nano-generators and highly sensitive self-powered NEMS sensors.

Wireless sensor nodes (WSNs) are the fundamental part of an Internet of Things (IoT) system for detecting and transmitting data to a master node for processing. Several research studies reveal that one of the disadvantages of conventional, battery-powered WSNs, however, is that they typically require periodic maintenance. This paper aims to contribute to existing research studies on this issue by exploring a new energy-autonomous and battery-free WSN concept for monitor vibrations. The node is self-powered from the conversion of ambient mechanical vibration energy into electrical energy through a piezoelectric transducer implemented with lead-free lithium niobate piezoelectric material to also explore solutions that go towards a greener and more sustainable IoT. Instead of implementing any particular sensors, the vibration measurement system exploits the proportionality between the mechanical power generated by a piezoelectric transducer and the time taken to store it as electrical energy in a capacitor. This helps reduce the component count with respect to conventional WSNs, as well as energy consumption and production costs, while optimizing the overall node size and weight. The readout is therefore a function of the time it takes for the energy storage capacitor to charge between two constant voltage levels. The result of this work is a system that includes a specially designed lead-free piezoelectric vibrational transducer and a battery-less sensor platform with Bluetooth low energy (BLE) connectivity. The system can harvest energy in the acceleration range [0.5 g–1.2 g] and measure vibrations with a limit of detection (LoD) of 0.6 g.

Growth of Si, Ge, and, thus, SiGe nanowires (NWs) by catalyzed chemical vapor deposition proceeds at different process conditions, preventing easy realization of axial multijunctions interesting for device realization. In this paper, we propose a common process to obtain both Si, Ge, and alloyed NWs simply by adding HCl in the gas phase. It is demonstrated that addition of HCl during the growth improves the structural quality of the SiGe NWs, avoids the tapering of NWs by decreasing the uncatalyzed growth, increases the Ge fraction of the SiGe alloy NWs, and decreases the growth rate. A qualitative model based on the experimental results is proposed to explain the role of HCl during the growth. This model can be more generally applied to explain the tendency observed in the literature concerning the growth of SiGe alloyed NWs without HCl. It is based on a competition between adsorption, decomposition, and incorporation of Si and Ge in the catalyst. This competition is mainly regulated by the gas phase composition and by the reaction between the reactive species and the catalyst surface.

Low-frequency noise has been studied in compressively strained ${\text{Si}}_{0.8}{\text{Ge}}_{0.2}$ core-shell nanowire (NW) p-channel transistors compared with unstrained NWs. The noise has been well interpreted using the carrier number with correlated mobility fluctuation model. The volume trap density, $N_t$ , lies in the range of $2.9\times {10}^{18}–4.3\times {10}^{19}{\text{cm}}^{-3}{\text{eV}}^{-1}$ , which is similar to standard high-$k$ planar devices. The impact of Coulomb and surface roughness scatterings is more significant in unstrained SiGe NWs. This result can be explained by the better carrier confinement at the central region of SiGe NWs due to the additional band offset in the compressively strained NWs.

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si_{1- x} Ge _x NW has been successfully varied by modifying the gas flow ratio: R = GeH₄/(SiH₄ + GeH₄). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement.