We present a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub-micron scale realized in the silicon layer and filled with silicon dioxide right below a properly designed antireflection (AR) coating. The study and optimization of the structure as a function of all the photonic lattice parameters, together with the calculation of the absorption in a single layer, allows to identify the different roles of the periodic pattern in determining an increase of the absorbance. From one side, the photonic crystal and the AR coating act as impedance matching layers, thus minimizing reflection of incident light over a particularly wide range of frequencies. Moreover a strong absorption enhancement is observed when the incident light is coupled into the quasi guided modes of the photonic slab. We found a substantial increase of the short-circuit current when the parameters are properly optimized, demonstrating the advantage of a wavelength-scale, photonic crystal based approach for patterning of thin-film silicon solar cells.

We map out the band structure of a one-dimensional photonic crystal while a 12-fs control pulse activates ultrastrong interaction with quantized electronic transitions in semiconductor quantum wells. Phase-locked multi-terahertz transients trace the buildup of a large vacuum Rabi splitting and an unexpected asymmetric formation of the upper and lower polariton bands. The pronounced flattening of the photonic bands causes a slow-down of the group velocity by one order of magnitude on the time scale of the oscillation period of light.

We demonstrate controlled optical critical coupling into highly confining metal-insulator-metal grating-based resonators. We achieve the coupling—and hence the absorption—of more than 95% of the incoming photons in a gallium arsenide based system confined between a metallic ground plane and a metallic grating. The demonstration is given in the terahertz range of the electromagnetic spectrum, at 75 μm ≤ λ ≤ 120 μm, for a semiconductor core thickness of only 10 μm. It is valid, however, at any wavelength, upon linear scaling. The critical coupling regime is judiciously tuned by precise etching of the semiconductor material in between the metallic fingers. The experimental results are in accordance with the universal behaviour predicted by temporal coupled mode theory.

In order to extend the Coherent Perfect Absorption (CPA) phenomenology to broadband operation, the interferometric control of absorption is investigated in two-port systems without port permutation symmetry. Starting from the two-port theory of CPA treated within the Scattering Matrix formalism, we demonstrate that for all linear two-port systems with reciprocity the absorption is represented by an ellipse as function of the relative phase and intensity of the two input beams, and it is uniquely determined by the device single-beam reflectance and transmittance, and by the dephasing of the output beams. The basic properties of the phenomenon in systems without port permutation symmetry show that CPA conditions can still be found in such asymmetric devices, while the asymmetry can be beneficial for broadband operation. As experimental proof, we performed transmission measurements on a metal-semiconductor metamaterial, employing a Mach-Zehnder interferometer. The experimental results clearly evidence the elliptical feature of absorption and trace a route towards broadband operation.