Photovoltaic (PV) conversion of solar energy starts to give an appreciable contribution to power generation in many countries, with more than 90% of the global PV market relying on solar cells based on crystalline silicon (c-Si). The current efficiency record of c-Si solar cells is 26.7%, against an intrinsic limit of ~29%. Current research and production trends aim at increasing the efficiency, and reducing the cost, of industrial modules. In this paper, we review the main concepts and theoretical approaches that allow calculating the efficiency limits of c-Si solar cells as a function of silicon thickness. For a given material quality, the optimal thickness is determined by a trade-off between the competing needs of high optical absorption (requiring a thicker absorbing layer) and of efficient carrier collection (best achieved by a thin silicon layer). The efficiency limits can be calculated by solving the transport equations in the assumption of optimal (Lambertian) light trapping, which can be achieved by inserting proper photonic structures in the solar cell architecture. The effects of extrinsic (bulk and surface) recombinations on the conversion efficiency are discussed. We also show how the main conclusions and trends can be described using relatively simple analytic models. Prospects for overcoming the 29% limit by means of silicon/perovskite tandems are briefly discussed. Graphical Abstract

We present a theoretical optimisation of 1D apodized grating couplers in a “pure” Silicon-On-Insulator (SOI) architecture, i.e. without any bottom reflector element, by means of a general mutative method. We perform a comprehensive 2D Finite Difference Time Domain study of chirped and apodized grating couplers in 220 nm SOI, and demonstrate that the global maximum coupling efficiency in that platform is capped to 65% (−1.9 dB). Moving to designs with thicker Si-layers, we identify a new record design in 340 nm SOI, with a simulated coupling efficiency of 89% (−0.5 dB). Going to thicker Si layers does not further improve the efficiency, implying that −0.5 dB may be a global maximum for a grating coupler in SOI without a bottom-reflector. Even after allowing for 193 nm UV-lithographic fabrication constraints, the 340 nm design still offers −0.7 dB efficiency. These new apodized designs are the first pure SOI couplers compatible with deep-UV lithography to offer better than −1 dB insertion losses. With only very minor changes to existing deposition and lithography recipes, they are compatible with the multi-project wafer runs already offered by Si-Photonics foundries.

We present a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub-micron scale realized in the silicon layer and filled with silicon dioxide right below a properly designed antireflection (AR) coating. The study and optimization of the structure as a function of all the photonic lattice parameters, together with the calculation of the absorption in a single layer, allows to identify the different roles of the periodic pattern in determining an increase of the absorbance. From one side, the photonic crystal and the AR coating act as impedance matching layers, thus minimizing reflection of incident light over a particularly wide range of frequencies. Moreover a strong absorption enhancement is observed when the incident light is coupled into the quasi guided modes of the photonic slab. We found a substantial increase of the short-circuit current when the parameters are properly optimized, demonstrating the advantage of a wavelength-scale, photonic crystal based approach for patterning of thin-film silicon solar cells.

We present a formalism for studying the radiation-matter interaction in multilayered dielectric structures with active semiconductor quantum wells patterned with an in-plane periodic lattice. The theory is based on the diagonalization of the generalized Hopfield matrix, and it includes loss channels in a non-Hermitian formulation. Hybrid elementary excitations named photonic crystal polaritons arise in these systems, whose detailed dispersion and loss characteristics are shown to depend on material composition as well as on symmetry properties of the lattice. We show the generality of the approach by calculating polariton dispersions in very diverse material platforms, such as multilayered perovskite-based lattices or inorganic semiconductor heterostructures. As an application of the method, we show how to engineer lossless polariton modes through excitonic coupling to bound states in the continuum at either zero or finite in-plane wave vector, and discuss their topological properties. Detailed comparison with a semiclassical approach based on the scattering matrix method is provided, which allows to interpret the optical spectra in terms of polarization-dependent excitation of the different polariton branches. This paper introduces an efficient and invaluably versatile numerical approach to engineer photonic crystal polaritons, with potential applications ranging from low-threshold lasers to symmetry-protected propagating modes of hybrid radiation-matter states.

A theory of Wannier-Mott excitons bound to monolayer (ML) impurity planes in semiconductors, which is based on Green’s function tight-binding calculations of the single-particle states, is presented. Binding energies and oscillator strengths for one and two MLs of InAs in GaAs are predicted to be much larger than in the usual ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ thick quantum wells. The reason is the increase of effective mass of both carriers due to folding of the InAs bands along the growth direction. The results suggest that ML insertions can be used as intense light sources in light-emitting devices.