An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and ⁶⁰Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 10¹² n/cm² and 3 × 10¹² n/cm² exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

Precursor signals for earthquakes, such as radon anomalies, thermal anomalies, and water level changes, have been studied in earthquake prediction over several centuries. The atmospheric vertical electric field anomaly has been observed in recent years as a new and valuable signal for short-term earthquake prediction. In this paper, a physical mechanism of the atmospheric vertical electric field anomaly before the earthquake was proposed, based on which the Wenchuan earthquake verified the correctness of the model. Using Monte Carlo simulations, the variation of the radon concentration with height before the earthquake was used to simulate and calculate the ionization rates of radioactive radon decay products at different heights. We derived the atmospheric vertical electric field from −593 to −285 V/m from the surface to 10 m before the earthquake by solving the system of convection-diffusion partial equations for positive and negative particles. Moreover, negative atmospheric electric field anomalies were observed in both Wenjiang and Pixian before the Wenchuan earthquake on 12 May, with peaks of −600 V/m in Pixian and −200 V/m in Wenjiang. The atmospheric electric field data obtained from the simulation were shown to be in excellent concordance with the observed data of the Wenchuan earthquake. The physical mechanism can provide theoretical support for the atmospheric electric field anomaly as an earthquake precursor.

Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper is dedicated to the investigation of the SEB mechanism in a GaN power device using a femtosecond pulsed laser. In the test, the SEB of a commercial p-GaN power device was triggered by a focused laser beam with a wavelength of 620 nm, and the irradiation-sensitive area of the devices was identified. We observed that the damage modes were consistent with the results of heavy ion experiments. The vertical breakdown of the drain is proposed as the dominant mechanism of SEB. We also provide a schematic representation of the leakage path formation using the electrical data obtained following laser-induced SEB. This study provides an important reference for consideration of device reliability and application prospects.

Space radiation-induced Single Event Effect (SEE) and Space Electrostatic Discharge (SESD) are two significant phenomena which cause spacecraft anomalies. However, it is difficult to differentiate between them when trying to identify the root causes of the on-orbit anomalies. This paper pioneers the study of similarities and difference between transients induced by SEE and those induced by SESD. The work is done with the LM124, a well-known operational amplifier. The physical mechanisms between the transients induced by SEE and SESD are studied using H-SPICE simulations. The characteristics of the transient waveforms and the relationship with an external stimulus between SEE and SESD are further investigated with a pulsed laser SEE facility and SESD test system, respectively. The results show that similar transient waveforms can be generated at the device output by both SEE and SESD, while bipolar transients are found only in SEE testing. The different output transient signatures could be used to identify the root causes of spacecraft anomalies.