The optical conductivity ${\sigma }_1\left(\omega \right)$ and the spectral weight $SW$ of four topological insulators with increasing chemical compensation (${\mathrm{Bi}}_2{\mathrm{Se}}_3,{\mathrm{Bi}}_2{\mathrm{Se}}_2\mathrm{Te},{\mathrm{Bi}}_{2-x}{\mathrm{Ca}}_x{\mathrm{Se}}_3$, and ${\mathrm{Bi}}_2{\mathrm{Te}}_2\mathrm{Se}$) have been measured from 5 to 300 K and from subterahertz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks that we assign to electronic transitions among localized states. From the far-infrared spectral weight $SW$ of the most compensated sample (${\mathrm{Bi}}_2{\mathrm{Te}}_2\mathrm{Se}$), one can estimate a density of charge carriers on the order of ${10}^{17}/{\mathrm{cm}}^3$ in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still influenced by three-dimensional charge excitations.

Light can be strongly confined in subwavelength spatial regions through the interaction with plasmons, the collective electronic modes appearing in metals and semiconductors. This confinement, which is particularly important in the terahertz spectral region, amplifies light-matter interaction and provides a powerful mechanism for efficiently generating nonlinear optical phenomena. These effects are particularly relevant in graphene and topological insulators, where massless Dirac fermions show a naturally nonlinear optical behavior in the terahertz range. The strong interaction scenario has been considered so far from the point of view of light. In this Letter, we investigate instead the effect of strong interaction on the plasmon itself. In particular, we will show that Dirac plasmons in ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ topological insulator are strongly renormalized when excited by high-intensity terahertz radiation by displaying a huge red-shift down to 60% of its characteristic frequency. This opens the road towards tunable terahertz nonlinear optical devices based on topological insulators.

The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO₃ 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO₃ is the first known 3D Slater insulator.

The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.