The factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents are investigated theoretically and experimentally. The decrease in the gain due to self-heating under CW operation and spectral holeburning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial holeburning, are the dominant mechanisms limiting the maximum achievable output power. S Online supplementary data available from stacks.iop.org/NJP/12/085007/ mmedia Contents

More and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective $\alpha$-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion, and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.

Single longitudinal mode emission of laterally coupled distributed feedback (LC-DFB) laser diodes (LDs) based on InGaN/GaN multi-quantum-well structures containing 10 th -order surface Bragg gratings with V-shaped grooves is demonstrated. The gratings were fabricated alongside a 2 μm wide contact stripe by i-line stepper lithography and inductively coupled plasma etching. A single peak emission at 404.6 nm with a full width at half maximum of 0.04 nm was achieved at an output power of about 46 mW under pulsed laser operation. The shift of the lasing wavelength of LC-DFB LDs in the temperature range from 22 °C to 45 °C was around three times smaller than that of comparable ridge waveguide Fabry-Pérot LDs.

With rising current, the lateral far-field angle of high-power broad-area lasers widens (far-field blooming), which can be partly attributed to non-thermal effects due to carrier-induced refractive index and gain changes that become the dominant mechanism under pulsed operation. To analyze the non-thermal contribution to far-field blooming, we use a traveling wave-based model that properly describes the injection of the current into and the diffusion of the carriers within the active region. Although no pre-assumptions regarding the modal composition of the field is made and filamentation is automatically accounted for, the highly dynamic time-dependent optical field distribution can be very well represented by only a few modes of the corresponding stationary waveguide equation obtained by a temporal average of the carrier density and field intensity. The reduction of current spreading and spatial holeburning by selecting proper design parameters can substantially improve the beam quality of the laser.

A multi‐active‐region bipolar‐cascade edge‐emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third‐order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm ² . The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm ⁻¹ . The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.