Due to their unique physicochemical characteristics, palladium nanoparticles (Pd-NPs) have shown tremendous promise in biological applications. The biosynthesis of Pd-NPs employing Saudi propolis has been designed to be environmental, fast, controlled, and cost-effective. The formation and stability of biosynthesized Pd-NPs by Saudi propolis extract were proved by ultraviolet–visible spectrophotometry (UV-Vis), Fourier-transform infrared spectroscopy (FT-IR), and Zeta potential analysis. Transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray diffraction (XRD) findings show that the average particle size of Pd-NPs is between 3.14 and 4.62 nm, which is in quantum scale. The Saudi propolis enhanced the antimicrobial activity against B. subtilis, S. aureus, E. coli, K. pneumoniae, and C. albicans. Pd-NPs show effective anticancer activity against ductal carcinoma (MCF-7) with IC50 of 104.79 µg/mL.

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO₂/SiN a different pretreatment is used to reduce the effects of trapping and consequently has a large effect on these radio-frequency parameters. We used cold-FET and hot FET technique to extract the intrinsic and extrinsic parameters in order to show the effect passivation of parasitic elements; the parasitic capacitances, resistances and inductances. From this point we discover the extent of their impact on power and microwave performance.

Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO₂|SiN is investigated. Capacitance-voltage at various temperatures (C–V–T), a drain current–voltage at various gate voltages (I_ds–V_ds–V_gs), the gate leakage current with various temperatures (I_gs–V_gs–T), and the maximum extrinsic transconductance G_max are measured; all of these measurements show the impact of SiO₂|SiN passivation on the performances of AlGaN|GaN|Si HEMTs.