The electronic structure and properties of the orthorhombic phase of the $\mathrm{CH}{}_{3}\mathrm{NH}{}_{3}\mathrm{PbI}{}_{3}$ perovskite are computed with density functional theory. The structure, optimized using a van der Waals functional, reproduces closely the unit cell volume. The experimental band gap is reproduced accurately by combining spin-orbit effects and a hybrid functional in which the fraction of exact exchange is tuned self-consistently to the optical dielectric constant. Including spin-orbit coupling strongly reduces the anisotropy of the effective mass tensor, predicting a low electron effective mass in all crystal directions. The computed binding energy of the unrelaxed exciton agrees with experimental data, and the values found imply a fast exciton dissociation at ambient temperature. Also polaron masses for the separated carriers are estimated. The values of all these parameters agree with recent indications that fast dynamics and large carrier diffusion lengths are key in the high photovoltaic efficiencies shown by these materials.

Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals ($M=\mathrm{Ti},\mathrm{V}$) show an isolated partially filled narrow band containing three $t_{2g}$-type states per $M$ atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through $M$ substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.

This first-principles study describes the properties of Si implanted with several chalcogen species (S, Se, Te) at doses considerably above the equilibrium solubility limit, especially when coimplanted with the group III atoms B and Al. The measurements of chalcogen-implanted Si show strong optical absorption in the infrared range. The calculations carried out show that substitution of Si by chalcogen atoms requires lower formation energy than the interstitial implantation. In the resulting electronic structure, at concentrations close to 0.5%, an impurity band determined by the properties of the chalcogens introduced is observed in the forbidden energy gap of Si. Although this band is a few tenths of an electron volt wide, it remains energetically isolated from both the valence and the conduction bands. Appropriate coimplantation with group III elements allows control over the occupation of the intermediate band while modifying its energies only slightly. A moderate energy gain (especially small for B) seems to be obtained when p-doping atoms occupy the sites next to those of the chalcogens. Therefore, the apparent electrostatic attraction between species that in isolation would act as acceptors and double donors is smaller than expected. The intermediate-band properties have been preserved for all of the coimplanted compounds analyzed here, regardless of the species involved or the distance between them, which constitutes an appreciable advantage for the design of new experimental materials.

With the intermediate band electronic structure, more efficient solar light harvesting in photocatalysis and photovoltaics becomes possible. Here V-substituted In2S3 is synthesized, being the first...

Sn- and Bi-doped Cu ₃ SbSe ₄ -based thermoelectric devices.