We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n⁺ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.

Niobium-doped titanium dioxide (Ti_1−xNb_xO₂) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H₂ atmosphere for 30 min. It was shown that the Ti_0.72Nb₀.₂₈O₂/p⁺-Si heterojunction fabricated on low resistivity silicon (10⁻³ Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm². As the resistance dependence on temperature revealed, the current across the Ti_0.72Nb_0.28O₂/p⁺-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated. The research was performed in the dark and under white light illumination at room temperature. Electron energy relaxation time was estimated using two models of I-V characteristics analysis applied to a structure with n-n⁺ junction and a model of voltage sensitivity dependence on microwave frequency. The best results were obtained using the latter model, showing that the electron energy relaxation time in a single quantum well structure (2DEG structure) is twice as long as that in the bulk semiconductor.

Dielectric permittivity (??), magnetic permeability (??) and dielectric and magnetic loss (tan ?? and tan ??, respectively) of magneto-dielectric cobalt ferrite-titania (CFO-TO) ceramic composites are determined from 200 to 300MHz. The four different combinations of phases - that can be produced in the sintered composite, according to the starting CFO/TO molar ratio - allow to tune the macroscopic permittivity and permeability. For the first time impedance, miniaturization and magneto-dielectric loss of the four classes of composites are calculated and discussed. The displayed miniaturization factors between 4.4 and 8.2 in the very-high frequency (VHF) range corroborate their potential application as magneto-dielectric substrate materials for antennas. Remarkably, the ceramic composites characterized by 2 vol.% and 3 vol.% of CFO and TO, respectively, dispersed in Fe2CoTi3O10 (FCTO) matrix display a magneto-dielectric loss lower than 0.07 and a miniaturization factor of 4.8.

Planar microwave bow-tie diodes on bases of selectively doped semiconductor structures are successfully used in the detection and imaging of electromagnetic radiation in millimeter and submillimeter wavelength ranges. Although the signal formation mechanism in these high-frequency diodes is said to be based on charge-carrier heating in a semiconductor in a strong electric field, the nature of the electrical signal across the bow-tie diodes is not yet properly identified. In this research paper, we present a comprehensive study of a series of various planar bow-tie diodes, starting with a simple asymmetrically shaped submicrometer-thick n-GaAs layer and finishing with bow-tie diodes based on selectively doped GaAs/AlGaAs structures of different electrical conductivity. The planar bow-tie diodes were fabricated on two different types of high-resistivity substrates: bulky semi-insulating GaAs substrate and elastic dielectric polyimide film of micrometer thickness. The microwave diodes were investigated using DC and high-frequency probe stations, which allowed us to examine a sufficient number of diodes and collect a large amount of data to perform a statistical analysis of the electrical parameters of these diodes. The use of probe stations made it possible to analyze the properties of the bow-tie diodes and clarify the nature of the detected voltage in the dark and under white-light illumination. The investigation revealed that the properties of various bow-tie diodes are largely determined by the energy states residing in semiconductor bulk, surface, and interfaces. It is most likely that these energy states are responsible for the slow relaxation processes observed in the studied bow-tie diodes.