Cesium-containing triple cation perovskites are attracting significant attention as suitable tandem partners for silicon solar cells. The perovskite layer of a solar cell must strongly absorb the visible light and be transparent to the infrared light. Optical transmittance measurements of perovskite layers containing different cesium concentrations (0–15%) were carried out on purpose to evaluate the utility of the layers for the fabrication of monolithic perovskite/silicon tandem solar cells. The transmittance of the layers weakly depended on cesium concentration in the infrared spectral range, and it was more than 0.55 at 997 nm wavelength. It was found that perovskite solar cells containing 10% of cesium concentration show maximum power conversion efficiency.

Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical properties of the triple cation perovskite film. Incorporation of small amount (x = 0.1) of cesium cations into Cs_x(MA_0.17FA_0.83)_1−x Pb(I_0.83Br_0.17)₃ leads to enhanced power conversion efficiency (PCE) of the solar cell resulting mainly from significant rise of the short-current density and the fill factor value. Further increase of Cs concentration (x > 0.1) decreases the film’s phase purity, carrier lifetime and correspondingly reduces PCE of the solar cell. Higher concentration of Cs (x ≥ 0.2) causes phase segregation of the perovskite alongside with formation of Cs-rich regions impeding light absorption.

The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films grown on compact and mesoporous titanium dioxide layers. Kinetics of charge carrier transport and their extraction in triple-cation perovskite solar cells were studied by using transient photovoltage and time-resolved photoluminescence decay measurements. X-ray diffraction analysis revealed that the crystallinity of the perovskite films grown on mesoporous titanium dioxide is better compared to the films grown on compact TiO₂. Mesoporous structured perovskite solar cells are found to have higher power conversion efficiency mainly due to enlarged perovskite/mesoporous -TiO₂ interfacial area and better crystallinity of their perovskite films.

Niobium-doped titanium dioxide (Ti_1−xNb_xO₂) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H₂ atmosphere for 30 min. It was shown that the Ti_0.72Nb₀.₂₈O₂/p⁺-Si heterojunction fabricated on low resistivity silicon (10⁻³ Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm². As the resistance dependence on temperature revealed, the current across the Ti_0.72Nb_0.28O₂/p⁺-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

The experimental and theoretical study of photovoltage formation in perovskite solar cells under pulsed laser excitation at 0.53 μm wavelength is presented. Two types of solar cells were fabricated on the base of cesium-containing triple cation perovskite films: (1) Cs_x(FA_0.83MA_0.17)_(1−x)Pb(I_0.83Br_0.17)₃ and (2) Cs_x(FA_0.83MA_0.17)_(1−x)Pb_0.8Sn_0.2(I_0.83Br_0.17)₃. It is found that photovoltage across the solar cells consists of two components, U = U_ph + U_f. The first one, U_ph, is the traditional photovoltage arising due to laser radiation-induced electron-hole pair generation. The second one, U_f, is the fast component following the laser pulse and has a polarity opposite to that of U_ph. It is shown that the fast photovoltage component results from the laser radiation-caused heating of free carriers. The transient photovoltage measurements show that the values of the fast component U_f are nearly the same in both types of perovskite solar cells. The magnitude of the traditional photovoltage of mixed Pb-Sn perovskite solar cells is lower than that of Pb-based cells.

Bow-tie diodes on the base of modulation-doped semiconductor structures are often used to detect radiation in GHz to THz frequency range. The operation of the bow-tie microwave diodes is based on carrier heating phenomena in an epitaxial semiconductor structure with broken geometrical symmetry. However, the electrical properties of bow-tie diodes are highly dependent on the purity of the grown epitaxial layer—specifically, the minimal number of defects—and the quality of the ohmic contacts. The quality of MBE-grown semiconductor structure depends on the presence of a buffer layer between a semiconductor substrate and an epitaxial layer. In this paper, we present an investigation of the electrical and optical properties of planar bow-tie microwave diodes fabricated using modulation-doped semiconductor structures grown via the MBE technique, incorporating either a GaAs buffer layer or a GaAs–AlGaAs super-lattice buffer between the semi-insulating substrate and the active epitaxial layer. These properties include voltage sensitivity, electrical resistance, I–V characteristic asymmetry, nonlinearity coefficient, and photoluminescence. The investigation revealed that the buffer layer, as well as the illumination with visible light, strongly influences the properties of the bow-tie diodes.