Here, we report the tunning study of superconductivity and charge density wave in $\mathrm{Cs}{\mathrm{V}}_3{\mathrm{Sb}}_5$ through the V kagome net doping. Combining electrical transport and magnetic susceptibility measurements, we reveal the opposite effect of Ta and Mo doping. Ta doping promotes the superconductivity but suppresses charge density wave, which may be explained by the lift of van Hove singularity towards $E_{\mathrm{F}}$. On the contrary, Mo doping suppresses the superconductivity quickly and leads to a continuous increase of charge density wave temperature up to 100.7 K. Our result suggests that electron doping can also effectively tune charge density wave state in $\mathrm{Cs}{\mathrm{V}}_3{\mathrm{Sb}}_5$.

Atomically thin two-dimensional materials including graphene, transition metal dichalcogenides, black phosphorus and so forth have been considered as promising channel medias for electronic and optoelectronic devices in the past few years. However, the poor photoresponse time and the large dark current are the two major issues which greatly block their applications. Here, we report a vertical Au–WSe ₂ –ITO (indium tin oxide) Schottky junction photodetector with a broadband photoresponse from 550–950 nm and a stable photovoltaic responsivity of ∼0.1 A W ⁻¹ . The fast photoresponse of ∼50 μ s and low dark current of ∼1 pA are achieved at the vertical Au–WSe ₂ –ITO photodetector. These results indicate that metal contact to a 2D material-based vertical Schottky junction can achieve an excellent photoelectric response.