This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V₃). Similar to V₃, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.

$\text{Pt}–\text{ZnO}–\text{Pb}\left({\text{Zr}}_{0.2}{\text{Ti}}_{0.8}\right){\text{O}}_3–\text{Pt}$ (PZT-ZnO) heterostructures were fabricated by using a sol-gel process. Capacitance-voltage measurements performed on a wide temperature range (20–450 K) have revealed the presence of a hysteresis that undergo a change of direction from clockwise at temperatures below 350 K to counter-clockwise at higher temperatures. In the first case, the hysteresis is produced by charge injection, similar to the case of classical metal-oxide-semiconductor capacitors. In the last case, the hysteresis is the fingerprint of polarization reversal, as reported for metal-ferroelectric-semiconductor (MFS) structures based on n-Si. The memory window at 450 K is about 6 V. This result suggests that PZT-ZnO MFS heterostructures can be used for memory devices working at elevated temperatures, in which the ZnO plays the role of the semiconductor.

Herein we report on novel multiferroic core–shell nanostructures of cobalt ferrite (CoFe₂O₄)–bismuth, sodium titanate doped with barium titanate (BNT–BT_0.08), prepared by a two–step wet chemical procedure, using the sol–gel technique. The fraction of CoFe₂O₄ was varied from 1:0.5 to 1:1.5 = BNT–BT_0.08/CoFe₂O₄ (molar ratio). X–ray diffraction confirmed the presence of both the spinel CoFe₂O₄ and the perovskite Bi_0.5Na_0.5TiO₃ phases. Scanning electron microscopy analysis indicated that the diameter of the core–shell nanoparticles was between 15 and 40 nm. Transmission electron microscopy data showed two–phase composite nanostructures consisting of a BNT–BT_0.08 core surrounded by a CoFe₂O₄ shell with an average thickness of 4–7 nm. Cole-Cole plots reveal the presence of grains and grain boundary effects in the BNT–BT_0.08/CoFe₂O₄ composite. Moreover, the values of the dc conductivity were found to increase with the amount of CoFe₂O₄ semiconductive phase. Both X-ray photoelectron spectroscopy (XPS) and Mössbauer measurements have shown no change in the valence of the Fe³⁺, Co²⁺, Bi³⁺ and Ti⁴⁺ cations. This study provides a detailed insight into the magnetoelectric coupling of the multiferroic BNT–BT_0.08/CoFe₂O₄ core–shell composite potentially suitable for magnetoelectric applications.